参数资料
型号: NCP1580DR2
厂商: ON Semiconductor
文件页数: 11/12页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM VM 8-SOIC
产品变化通告: Product Discontinuation 01/Oct/2008
标准包装: 2,500
PWM 型: 电压模式
输出数: 1
频率 - 最大: 412kHz
占空比: 95%
电源电压: 4.5 V ~ 13.2 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
NCP1580
Layout Considerations
As in any high frequency switching converter, layout is
very important. Switching current from one power device to
V IN
another can generate voltage transients across the
impedances of the interconnecting bond wires and circuit
traces. These interconnecting impedances should be
minimized by using wide, short printed circuit traces. The
TG
PHASE
Q1
L OUT
V OUT
critical components should be located as close together as
possible using ground plane construction or single point
NCP1580
BG
Q2
D2
C IN
C OUT
grounding. Figure 17 shows the critical power components
of the converter. To minimize the voltage overshoot the
GND
interconnecting wires indicated by heavy lines should be
part of ground or power plane in a printed circuit board. The
components shown in Figure 17 should be located as close
together as possible. Please note that the capacitors C IN and
C OUT each represent numerous physical capacitors. It is
desirable to locate the NCP1580 within 1 inch of the
MOSFETs, Q1 and Q2. The circuit traces for the MOSFETs’
gate and source connections from the NCP1580 must be
sized to handle up to 2.0 A peak current.
http://onsemi.com
11
RETURN
Figure 17.
R1
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