参数资料
型号: NCP3065BBGEVB
厂商: ON Semiconductor
文件页数: 3/18页
文件大小: 0K
描述: BOARD EVAL NCP3065 MR16 BOOST
设计资源: NCP3065BBGEVB Schematic
NCP3065BBGEVB Gerber Files
NCP3065BBGEVB Bill of Materials
标准包装: 1
电流 - 输出 / 通道: 350mA
输出及类型: 1,非隔离
输出电压: 8 ~ 12 V
输入电压: 6 ~ 16 V 或 12VAC
已供物品:
已用 IC / 零件: NCP3065
其它名称: NCP3065BBGEVB-ND
NCP3065BBGEVBOS
NCP3065, NCV3065
MAXIMUM RATINGS (measured vs. pin 4, unless otherwise noted)
Rating
V CC (Pin 6)
Comparator Inverting Input (Pin 5)
Darlington Switch Collector (Pin 1)
Darlington Switch Emitter (Pin 2) (Transistor OFF)
Darlington Switch Collector to Emitter (Pins 1 ? 2)
Darlington Switch Current
I pk Sense (Pin 7)
Timing Capacitor (Pin 3)
Symbol
V CC
V CII
V SWC
V SWE
V SWCE
I SW
V IPK
V TCAP
Value
0 to +40
? 0.2 to +V CC
0 to +40
? 0.6 to +V CC
0 to +40
1.5
? 0.2 to V CC + 0.2
? 0.2 to +1.4
Unit
V
V
V
V
V
A
V
V
Power Dissipation and Thermal Characteristics
PDIP ? 8
Thermal Resistance Junction ? to ? Air
SOIC ? 8
Thermal Resistance Junction ? to ? Air
DFN ? 8
Thermal Resistance Junction ? to ? Air
Thermal Resistance Junction ? to ? Case
Storage Temperature Range
Maximum Junction Temperature
Operating Junction Temperature Range (Note 3)
NCP3065, NCV3065
R q JA
R q JA
R q JA
R q JC
T STG
T J(MAX)
T J
100
180
78
14
? 65 to +150
+150
? 40 to +125
° C/W
° C/W
° C/W
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Pin 1 ? 8: Human Body Model 2000 V per AEC Q100 ? 002; 003 or JESD22/A114; A115
Machine Model Method 200 V
2. This device contains latch ? up protection and exceeds 100 mA per JEDEC Standard JESD78.
3. The relation between junction temperature, ambient temperature and Total Power dissipated in IC is T J = T A + R q ? P D
4. The pins which are not defined may not be loaded by external signals
http://onsemi.com
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