参数资料
| 型号： | NCV33074DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 22/26页 |
| 文件大小： | 0K |
| 描述： | ANA HI SPD/SS QUAD OA |
| 标准包装： | 2,500 |
| 放大器类型： | 通用 |
| 电路数： | 4 |
| 转换速率： | 13 V/µs |
| 增益带宽积： | 4.5MHz |
| 电流 - 输入偏压： | 100nA |
| 电压 - 输入偏移： | 1000µV |
| 电流 - 电源： | 1.9mA |
| 电流 - 输出 / 通道： | 30mA |
| 电压 - 电源，单路/双路(±)： | 3 V ~ 44 V，±1.5 V ~ 22 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOICN |
| 包装： | 带卷 (TR) |
MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A
http://onsemi.com
5
AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = 15 V, RL = connected to ground. TA = +25°C, unless otherwise noted.)
A Suffix
NonSuffix
Characteristics
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Slew Rate (Vin = 10 V to +10 V, RL = 2.0 kW, CL = 500 pF)
AV = +1.0
AV = 1.0
SR
8.0
10
13
8.0
10
13
V/
ms
Setting Time (10 V Step, AV = 1.0)
To 0.1% (+1/2 LSB of 9Bits)
To 0.01% (+1/2 LSB of 12Bits)
ts
1.1
2.2
1.1
2.2
ms
Gain Bandwidth Product (f = 100 kHz)
GBW
3.5
4.5
3.5
4.5
MHz
Power Bandwidth
AV = +1.0, RL = 2.0 kW, VO = 20 Vpp, THD = 5.0%
BW
160
160
kHz
Phase margin
RL = 2.0 kW
RL = 2.0 kW, CL = 300 pF
fm
60
40
60
40
Deg
Gain Margin
RL = 2.0 kW
RL = 2.0 kW, CL = 300 pF
Am
12
4.0
12
4.0
dB
Equivalent Input Noise Voltage
RS = 100 W, f = 1.0 kHz
en
32
32
nV/ Hz
√
Equivalent Input Noise Current
f = 1.0 kHz
in
0.22
0.22
pA/ Hz
√
Differential Input Resistance
VCM = 0 V
Rin
150
150
M
W
Differential Input Capacitance
VCM = 0 V
Cin
2.5
2.5
pF
Total Harmonic Distortion
AV = +10, RL = 2.0 kW, 2.0 Vpp ≤ VO ≤ 20 Vpp, f = 10 kHz
THD
0.02
0.02
%
Channel Separation (f = 10 kHz)
120
120
dB
Open Loop Output Impedance (f = 1.0 MHz)
|ZO|
30
30
W
Figure 2. Power Supply Configurations
Figure 3. Offset Null Circuit
Single Supply
Split Supplies
1
2
3
4
VCC
VEE
VCC
VEE
1
2
3
4
3.0 V to 44 V
VCC+|VEE|≤44 V
Offset nulling range is approximately
±80 mV with a 10 k
potentiometer (MC33071, MC34071 only).
VCC
VEE
1
2
3
4
5
6
7
10 k
+
-
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