参数资料
型号: NCV7608DWR2G
厂商: ON Semiconductor
文件页数: 13/27页
文件大小: 0K
描述: IC DVR LO/HI SIDE 8CH 28-SOIC
标准包装: 1,000
类型: 高端/低端,H 桥
输入类型: SPI
输出数: 8
导通状态电阻: 1.2 欧姆
电流 - 峰值输出: 350mA
电源电压: 3.15 V ~ 5.25,5.5 V ~ 28 V
安装类型: 表面贴装
封装/外壳: 28-SOIC(0.295",7.50mm 宽)
供应商设备封装: 28-SOIC
包装: 带卷 (TR)
NCV7608
TYPICAL PERFORMANCE CHARACTERISTICS
5.0
4.5
16
14
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VS = 5.5 V, V CC = 3.15 V
VS = 28 V, V CC = 5.25 V
VS = 28 V,
V CC = 3.15 V
VS = 5.5 V,
V CC = 5.25 V
12
10
8
6
4
2
0
VS = 28 V, V CC = 3.15 V
VS = 13.2 V, V CC = 3.15 V
VS = 28 V, V CC = 5.25 V
VS = 13.2 V, V CC = 5.25 V
VS = 5.5 V, V CC = 5.25 V
VS = 5.5 V, V CC = 3.15 V
? 0.5
? 50
0
50 100
150
200
? 2
? 50
0
50 100
150
200
TEMPERATURE ( ° C)
Figure 17. I(VCC) vs. Temperature
TEMPERATURE ( ° C)
Figure 18. VS Standby Current vs.
Temperature
300
200
100
0
? 100
? 200
? 300
? 400
LS, VS = 28 V
LS, VS = 5.5 V
HS, VS = 5.5 V
HS, VS = 28 V
300
200
100
0
? 100
? 200
? 300
? 400
Low Side
High Side
? 500
? 50
0
50 100
150
? 500
0
5
10
15
20
25
30
1.20
TEMPERATURE ( ° C)
Figure 19. Open Load Detect Current vs.
Temperature
50
VS (V)
Figure 20. Open Load Detect Current vs. VS @
25 5 C
1.00
? 40 ° C
40
30
Drain ? to ? Source Clamp
0.80
0.60
0.40
125 ° C
25 ° C
150 ° C
20
10
0
? 10
0.20
? 20
Source ? to ? Ground Clamp
0.00
0
0.10
0.20
0.30
0.40
? 30
? 50
0
50
100
150
200
I(Diode) (A)
Figure 21. Source ? to ? Drain Voltage Body
Diode
http://onsemi.com
13
TEMPERATURE ( ° C)
Figure 22. Output Clamp vs. Temperature
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