参数资料
型号: NCV7608DWR2G
厂商: ON Semiconductor
文件页数: 8/27页
文件大小: 0K
描述: IC DVR LO/HI SIDE 8CH 28-SOIC
标准包装: 1,000
类型: 高端/低端,H 桥
输入类型: SPI
输出数: 8
导通状态电阻: 1.2 欧姆
电流 - 峰值输出: 350mA
电源电压: 3.15 V ~ 5.25,5.5 V ~ 28 V
安装类型: 表面贴装
封装/外壳: 28-SOIC(0.295",7.50mm 宽)
供应商设备封装: 28-SOIC
包装: 带卷 (TR)
NCV7608
ELECTRICAL CHARACTERISTICS ( ? 40 ° C < T J < 150 ° C, 5.5 V < VS < 28 V, 3.15 V < V CC < 5.25 V, EN = V CC , unless otherwise
specified)
Characteristic
Symbol
Conditions
Min
Typ
Max
Unit
OUTPUT CLAMPS
Output clamp Voltage
Drain with respect to Source
Output clamp Voltage
Source with respect to GND
VOCLS
VOCHS
I(Dx) = 50 mA
Source = GND
I(Sx) = ? 50 mA, VS = 14 V
34
? 29
?
? 22
48
? 16
V
V
POWER OUTPUTS, AC CHARACTERISTICS
Low Side Rise Time
Low Side Fall Time
High side Rise Time
High side Fall Time
Serial Control
Output turn ? on time (High side
and Low ? side configuration)
Serial Control
Output turn ? off time (High side
and Low ? side configuration)
Parallel Control
Output turn ? on time (High side
and Low ? side configuration)
Parallel Control
Output turn ? off time (High side
and Low ? side configuration)
T_LSr
T_LSf
T_HSr
T_HSf
TDONs
TDOFFs
TDONp
TDOFFp
8 V < VS < 16 V
R load = 70 W
10/90% criteria, Figure 5
8 V < VS < 16 V
R load = 70 W
10/90% criteria, Figure 4
8 V < VS < 16 V
R load = 70 W
10/90% criteria, Figure 4
8 V < VS < 16 V
R load = 70 W
10/90% criteria, Figure 5
8 V < VS < 16 V
CSB going high (at 90%)
to V final going high (at 10%)
or V final going low (at 90%)
R load = 70 W , Figure 4
8 V < VS < 16 V
CSB going high (at 90%)
to V final going low (at 90%)
or V final going high (at 10%)
R load = 70 W , Figure 5
8 V < VS < 16 V
Inx going high (at 90%)
to V final going high (at 10%)
or V final going low (at 90%)
R load = 70 W , Figure 6
8 V < VS < 16 V
Inx going low (at 10%)
to V final going low (at 90%)
or V final going high (at 10%)
R load = 70 W , Figure 7
?
?
?
?
1
1
1
1
12
12
12
12
?
?
?
?
50
50
50
50
50
100
50
100
m s
m s
m s
m s
m s
m s
m s
m s
http://onsemi.com
8
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