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参数资料
| 型号： | NCV8402ASTT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/10页 |
| 文件大小： | 0K |
| 描述： | IC DVR LO SIDE 42V 2.0A SOT223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8402, NCV8402A
PACKAGE DIMENSIONS
SOT ? 223 (TO ? 261)
CASE 318E ? 04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
H E
e1
1
e
4
2
3
E
b
A
q
C
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
H E
q
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0 °
MILLIMETERS
NOM MAX
1.63 1.75
0.06 0.10
0.75 0.89
3.06 3.20
0.29 0.35
6.50 6.70
3.50 3.70
2.30 2.40
0.94 1.05
??? ???
1.75 2.00
7.00 7.30
? 1 0 °
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0 °
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
???
0.069
0.276
?
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
???
0.078
0.287
1 0 °
0.08 (0003)
A1
L
L1
STYLE 3:
PIN 1.
2.
GATE
DRAIN
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
3.
4.
SOURCE
DRAIN
2.0
0.079
1.5
0.059
2.3
0.091
2.3
0.091
SCALE 6:1
6.3
0.248
mm
inches
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NCV8402/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8402D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Self-Protected Low-Side Driver with Temperature and Current Limit |
| NCV8402DDR2G | 功能描述:MOSFET N-Channel MOSFET 2.0 A 42V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402STT1G | 功能描述:MOSFET SELF-PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402STT3G | 功能描述:MOSFET NCV8402 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 |
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