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参数资料
| 型号： | NCV8402ASTT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/10页 |
| 文件大小： | 0K |
| 描述： | IC DVR LO SIDE 42V 2.0A SOT223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
400
150 ° C, I D = 0.5 A
350
150 ° C, V GS = 5 V
300
300
150 ° C, I D = 1.7 A
250
150 ° C, V GS = 10 V
200
100 ° C, I D = 1.7 A
100 ° C, I D = 0.5 A
25 ° C, I D = 1.7 A 25 ° C, I D = 0.5 A
200
100 ° C, V GS = 5 V
25 ° C, V GS = 5 V
100 ° C, V GS = 10 V
100
? 40 ° C, I D = 1.7 A
? 40 ° C, I D = 0.5 A
150
100
? 40 ° C, V GS = 5 V
? 40 ° C, V GS = 10 V
25 ° C, V GS = 10 V
0
4
5
6
7
8
9
10
50
0.2
0.4
0.6
0.8
1 1.2
1.4
1.6
1.8
2
2
V GS (V)
Figure 8. R DS(on) vs. Gate ? Source Voltage
8
I D (A)
Figure 9. R DS(on) vs. Drain Current
1.75
1.5
1.25
1
0.75
I D = 1.7 A
V GS = 5 V
V GS = 10 V
7
6
5
4
3
? 40 ° C
25 ° C
100 ° C
150 ° C
0.5
? 40 ? 20
0
20
40 60
80
100
120
140
2
5
6
7
8
V DS = 10 V
9
10
8
T ( ° C)
Figure 10. Normalized R DS(on) vs. Temperature
10
V GS (V)
Figure 11. Current Limit vs. Gate ? Source
Voltage
V GS = 0 V
7
1
150 ° C
6
5
V GS = 10 V
0.1
0.01
100 ° C
4
3
V GS = 5 V
0.001
25 ° C
? 40 ° C
V DS = 10 V
2
? 40 ? 20 0
20
40
60
80
100
120
140
0.0001
10
15
20
25
30
35
40
T J ( ° C)
Figure 12. Current Limit vs. Junction
Temperature
http://onsemi.com
5
V DS (V)
Figure 13. Drain ? to ? Source Leakage Current
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8402D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Self-Protected Low-Side Driver with Temperature and Current Limit |
| NCV8402DDR2G | 功能描述:MOSFET N-Channel MOSFET 2.0 A 42V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402STT1G | 功能描述:MOSFET SELF-PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402STT3G | 功能描述:MOSFET NCV8402 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 |
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