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参数资料
| 型号： | NCV8402ASTT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC DVR LO SIDE 42V 2.0A SOT223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8402, NCV8402A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage Internally Clamped
Symbol
V DSS
Value
42
Unit
V
Drain ? to ? Gate Voltage Internally Clamped
Gate ? to ? Source Voltage
(R G = 1.0 M W )
V DGR
V GS
42
" 14
V
V
Continuous Drain Current
I D
Internally Limited
Power Dissipation
Thermal Resistance
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
@ T T = 25 ° C (Note 1)
Junction ? to ? Ambient Steady State (Note 1)
Junction ? to ? Ambient Steady State (Note 2)
Junction ? to ? Tab Steady State (Note 1)
P D
R q JA
R q JA
R q JT
1.1
1.7
8.9
114
72
14
W
° C/W
Single Pulse Drain ? to ? Source Avalanche Energy
(V DD = 32 V, V G = 5.0 V, I PK = 1.0 A, L = 300 mH, R G(ext) = 25 W )
E AS
150
mJ
Load Dump Voltage
Operating Junction Temperature
Storage Temperature
(V GS = 0 and 10 V, R I = 2.0 W , R L = 9.0 W , t d = 400 ms)
V LD
T J
T stg
87
? 40 to 150
? 55 to 150
V
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface ? mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 ″ thick).
2. Surface ? mounted onto 2 ″ sq. FR4 board (1 ″ sq., 1 oz. Cu, 0.06 ″ thick).
+
I D
DRAIN
I G
+
VGS
?
GATE
SOURCE
VDS
?
Figure 1. Voltage and Current Convention
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8402D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Self-Protected Low-Side Driver with Temperature and Current Limit |
| NCV8402DDR2G | 功能描述:MOSFET N-Channel MOSFET 2.0 A 42V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402STT1G | 功能描述:MOSFET SELF-PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402STT3G | 功能描述:MOSFET NCV8402 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 |
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