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参数资料
| 型号： | NCV8402ASTT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC DVR LO SIDE 42V 2.0A SOT223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(Note 3)
Zero Gate Voltage Drain Current
V GS = 0 V, I D = 10 mA, T J = 25 ° C
V GS = 0 V, I D = 10 mA, T J = 150 ° C
(Note 5)
V GS = 0 V, V DS = 32 V, T J = 25 ° C
V (BR)DSS
I DSS
42
40
46
45
0.25
55
55
4.0
V
m A
V GS = 0 V, V DS = 32 V, T J = 150 ° C
(Note 5)
1.1
20
Gate Input Current
V DS = 0 V, V GS = 5.0 V
I GSSF
50
100
m A
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS = V DS , I D = 150 m A
V GS(th)
1.3
1.8
2.2
V
Gate Threshold Temperature Coefficient
V GS(th) /T J
4.0
? mV/ ° C
Static Drain ? to ? Source On ? Resistance
V GS = 10 V, I D = 1.7 A, T J = 25 ° C
R DS(on)
165
200
m W
V GS = 10 V, I D = 1.7 A, T J = 150 ° C
(Note 5)
V GS = 5.0 V, I D = 1.7 A, T J = 25 ° C
V GS = 5.0 V, I D = 1.7 A, T J = 150 ° C
(Note 5)
V GS = 5.0 V, I D = 0.5 A, T J = 25 ° C
V GS = 5.0 V, I D = 0.5 A, T J = 150 ° C
(Note 5)
305
195
360
190
350
400
230
460
230
460
Source ? Drain Forward On Voltage
V GS = 0 V, I S = 7.0 A
V SD
1.0
V
SWITCHING CHARACTERISTICS (Note 5)
Turn ? ON Time (10% V IN to 90% I D )
Turn ? OFF Time (90% V IN to 10% I D )
Slew ? Rate ON (70% V DS to 50% V DS )
Slew ? Rate OFF (50% V DS to 70% V DS )
V GS = 10 V, V DD = 12 V
I D = 2.5 A, R L = 4.7 W
V GS = 10 V, V DD = 12 V,
R L = 4.7 W
t ON
t OFF
? dV DS /dt ON
dV DS /dt OFF
25
120
0.8
0.3
m s
V /m s
SELF PROTECTION CHARACTERISTIC S (T J = 25 ° C unless otherwise noted) (Note 4)
Current Limit
V DS = 10 V, V GS = 5.0 V, T J = 25 ° C
I LIM
3.7
4.3
5.0
A
V DS = 10 V, V GS = 5.0 V, T J = 150 ° C
(Note 5)
V DS = 10 V, V GS = 10 V, T J = 25 ° C
V DS = 10 V, V GS = 10 V, T J = 150 ° C
(Note 5)
2.3
4.2
2.7
3.0
4.8
3.6
3.7
5.4
4.5
Temperature Limit (Turn ? off)
V GS = 5.0 V (Note 5)
T LIM(off)
150
175
200
° C
Thermal Hysteresis
V GS = 5.0 V
D T LIM(on)
15
Temperature Limit (Turn ? off)
Thermal Hysteresis
V GS = 10 V (Note 5)
V GS = 10 V
T LIM(off)
D T LIM(on)
150
165
15
185
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current
V GS = 5 V I D = 1.0 A
I GON
50
m A
V GS = 10 V I D = 1.0 A
400
Current Limit Gate Input Current
V GS = 5 V, V DS = 10 V
I GCL
0.05
mA
V GS = 10 V, V DS = 10 V
0.4
Thermal Limit Fault Gate Input Current
V GS = 5 V, V DS = 10 V
I GTL
0.15
mA
V GS = 10 V, V DS = 10 V
ESD ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted) (Note 5)
0.7
Electro ? Static Discharge Capability
Human Body Model (HBM)
ESD
4000
V
Machine Model (MM)
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
http://onsemi.com
3
400
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