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| 型号： | NCV8403ADTRKG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOW SIDE TEMP/CURR DPAK-4 |
| 标准包装： | 2,500 |
| 系列： | * |
NCV8403, NCV8403A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage Internally Clamped
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
42
" 14
Unit
Vdc
Vdc
Drain Current
Continuous
I D
Internally Limited
Total Power Dissipation
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
Thermal Resistance ? SOT ? 223 Version
Junction ? to ? Case
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
Thermal Resistance ? DPAK Version
Junction ? to ? Case
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
Single Pulse Inductive Load Switching Energy
(V DD = 25 Vdc, V GS = 5.0 V, I L = 2.8 A, L = 120 mH, R G = 25 W )
Load Dump Voltage (V GS = 0 and 10 V, R I = 2.0 W , R L = 4.5 W , t d = 400 ms)
Operating Junction Temperature
Storage Temperature
P D
R q JC
R q JA
R q JA
R q JC
R q JA
R q JA
E AS
V LD
T J
T stg
1.13
1.56
12
110
80
2.5
95
50
470
55
? 40 to 150
? 55 to 150
W
° C/W
mJ
V
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface mounted onto minimum pad size (0.412 ″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1 ″ square pad size (1.127 ″ square) FR4 PCB, 1 oz cu.
+
I D
DRAIN
I G
+
VGS
?
GATE
SOURCE
VDS
?
Figure 1. Voltage and Current Convention
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8403ASTT1G | 功能描述:MOSFET SELF PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403ASTT3G | 功能描述:MOSFET SELF PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403DTRKG | 功能描述:MOSFET 42V 14A SINGLE N CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403STT1G | 功能描述:MOSFET NCV8403 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403STT3G | 功能描述:MOSFET NCV8403 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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