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参数资料
| 型号： | NDD03N50Z-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 2.6A IPAK |
| 产品目录绘图： | MOSFET IPAK-3 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.3 欧姆 @ 1.15A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 274pF @ 25V |
| 功率 - 最大： | 58W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NDD03N50Z-1G-ND NDD03N50Z-1GOS |
NDD03N50Z
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction ? to ? Case (Drain)
Junction ? to ? Ambient Steady State
NDD03N50Z
(Note 3) NDD03N50Z
(Note 2) NDD03N50Z ? 1
R q JC
R q JA
2.2
41
80
° C/W
2. Insertion mounted
3. Surface mounted on FR4 board using 1 ″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi-
cient
BV DSS
D BV DSS /
D T J
V GS = 0 V, I D = 1 mA
Reference to 25 ° C,
I D = 1 mA
500
0.6
V
V/ ° C
Drain ? to ? Source Leakage Current
Gate ? to ? Source Forward Leakage
I DSS
I GSS
V DS = 500 V, V GS = 0 V
V GS = ± 20 V
25 ° C
150 ° C
1.0
50
± 10
m A
m A
ON CHARACTERISTICS (Note 4)
Static Drain ? to ? Source
On ? Resistance
Gate Threshold Voltage
Forward Transconductance
R DS(on)
V GS(th)
g FS
V GS = 10 V, I D = 1.15 A
V DS = V GS , I D = 50 m A
V DS = 15 V, I D = 1.15 A
3.0
2.8
1.8
3.3
4.5
W
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
Output Capacitance (Note 5)
Reverse Transfer Capacitance (Note 5)
Total Gate Charge (Note 5)
Gate ? to ? Source Charge (Note 5)
Gate ? to ? Drain (“Miller”) Charge (Note 5)
C iss
C oss
C rss
Q g
Q gs
Q gd
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DD = 250 V, I D = 2.6 A,
V GS = 10 V
219
28
6.0
5.0
1.2
3.2
274
38
8.0
10
2.3
5.5
329
50
10
16
4.0
8.0
pF
nC
Plateau Voltage
V GP
6.4
V
Gate Resistance
R g
1.5
4.5
13.5
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn ? On Delay Time
t d(on)
9.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 250 V, I D = 2.6 A,
V GS = 10 V, R G = 5 W
7.0
15
7.0
SOURCE ? DRAIN DIODE CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V SD
t rr
Q rr
I S = 2.6 A, V GS = 0 V
V GS = 0 V, V DD = 30 V
I S = 2.6 A, di/dt = 100 A/ m s
240
0.7
1.6
V
ns
m C
4. Pulse Width ≤ 380 m s, Duty Cycle ≤ 2%.
5. Guaranteed by design.
http://onsemi.com
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| NDD03N50ZT4G | 功能描述:MOSFET 500V 2.6A HVFET DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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