参数资料
型号: NDD03N60ZT4G
厂商: ON Semiconductor
文件页数: 7/10页
文件大小: 0K
描述: MOSFET N-CH 600V DPAK
产品目录绘图: MOSFET DPAK Pkg
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 2.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.6 欧姆 @ 1.2A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 50µA
闸电荷(Qg) @ Vgs: 12nC @ 10V
输入电容 (Ciss) @ Vds: 312pF @ 25V
功率 - 最大: 61W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 标准包装
其它名称: NDD03N60ZT4GOSDKR
NDF03N60Z, NDD03N60Z
ORDERING INFORMATION
Order Number
NDF03N60ZG
NDF03N60ZH
NDD03N60Z ? 1G
NDD03N60ZT4G
Package
TO ? 220FP
(Pb ? Free, Halogen ? Free)
TO ? 220FP
(Pb ? Free, Halogen ? Free)
IPAK
(Pb ? Free, Halogen ? Free)
DPAK
(Pb ? Free, Halogen ? Free)
Shipping ?
50 Units / Rail
50 Units / Rail
75 Units / Rail
2500 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
NDF03N60ZG
or
NDF03N60ZH
AYWW
4
Drain
4
Drain
Gate
Drain
Source
1 2 3
Gate Drain Source
IPAK
2
1 Drain 3
Gate Source
DPAK
TO ? 220FP
A
Y
WW
G, H
= Location Code
= Year
= Work Week
= Pb ? Free, Halogen ? Free Package
http://onsemi.com
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