- 您现在的位置：买卖IC网 > Datasheet目录483 > NDT3055L (Fairchild Semiconductor)MOSFET N-CH 60V 4A SOT-223-4 Datasheet资料下载
参数资料
| 型号： | NDT3055L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 4A SOT-223-4 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 345pF @ 25V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | NDT3055LDKR |
August 1998
NDT3055L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance, and withstand high energy pulse
in the avalanche and commutation modes. These devices
are particularly suited for low voltage applications such as
DC motor control and DC/DC conversion where fast
switching, low in-line power loss, and resistance to
transients are needed.
Features
4 A, 60 V. R DS(ON) = 0.100 ? @ V GS = 10 V,
R DS(ON) = 0.120 ? @ V GS = 4.5 V.
Low drive requirements allowing operation directly from logic
drivers. V GS(TH) < 2V.
High density cell design for extremely low R DS(ON) .
High power and current handling capability in a widely used
surface mount package.
SuperSOT TM -3
D
SuperSOT TM -6
SuperSOT TM -8
D
D
SO-8
SOT-223
D
SOIC-16
S
S
SOT-223
G
D
G
D
S
SOT-223 *
(J23Z)
G
G
S
Absolute Maximum Ratings
T A = 25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
NDT3055L
60
±20
Units
V
V
I D
Maximum Drain Current - Continuous
(Note 1a)
4
A
- Pulsed
25
P D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
(Note 1c)
1.3
1.1
T J ,T STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
* Order option J23Z for cropped center drain lead.
? 1998 Fairchild Semiconductor Corporation
NDT3055L Rev.A1
相关PDF资料 |
PDF描述 |
|---|---|
| NDT3055 | MOSFET N-CH 60V 4A SOT-223-4 |
| NDT451AN_J23Z | MOSFET N-CH 30V 7.2A SOT-223 |
| NDT452AP | MOSFET P-CH 30V 5A SOT-223-4 |
| NDT454P | MOSFET P-CH 30V 5.9A SOT-223 |
| NDT456P | MOSFET P-CH 30V 7.5A SOT-223-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDT3055L(J23Z) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3.7A I(D) | SOT-223 |
| NDT3055L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-223 |
| NDT3055L_Q | 功能描述:MOSFET SOT-223 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDT3055LX | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel 60V 4A SOT223 |
| NDT410EL | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。