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| 型号： | NDT3055 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 4A SOT-223-4 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 30V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | NDT3055DKR |
May 1998
NDT3055
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as DC motor control and
DC/DC conversion where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
4 A, 60 V. R DS(ON) = 0.100 ? @ V GS = 10 V.
High density cell design for extremely low R DS(ON) .
High power and current handling capability in a widely used
surface mount package.
SuperSOT TM -3
D
SuperSOT TM -6
SuperSOT TM -8
D
D
SO-8
SOT-223
SOIC-16
D
D
S
S
SOT-223
G
G
D
S
SOT-223*
G
G
S
(J23Z)
Absolute Maximum Ratings
T A = 25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
NDT3055
60
±20
Units
V
V
I D
Maximum Drain Current - Continuous
(Note 1a)
4
A
- Pulsed
25
P D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
(Note 1c)
1.3
1.1
T J ,T STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
* Order option J23Z for cropped center drain lead.
? 1998 Fairchild Semiconductor Corporation
NDT3055 Rev.B
相关PDF资料 |
PDF描述 |
|---|---|
| NDT451AN_J23Z | MOSFET N-CH 30V 7.2A SOT-223 |
| NDT452AP | MOSFET P-CH 30V 5A SOT-223-4 |
| NDT454P | MOSFET P-CH 30V 5.9A SOT-223 |
| NDT456P | MOSFET P-CH 30V 7.5A SOT-223-4 |
| NE34018-EVGA19 | EVAL BOARD NE34018 1.9GHZ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDT3055(J23Z) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4A I(D) | SOT-223 |
| NDT3055_J23Z | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDT3055-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDT Series N-Channel 60 V 0.1 O Enhancement Mode Field Effect Transistor SOT-223 |
| NDT3055L | 功能描述:MOSFET SOT-223 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDT3055L(J23Z) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3.7A I(D) | SOT-223 |
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