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| 型号： | NDT3055 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 4A SOT-223-4 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 30V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | NDT3055DKR |
Electrical Characteristics (T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
I D = 250 μA, Referenced to 25 C
mV/ C
BV DSS
? BV DSS / ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = 250 μA
V DS = 48 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
o
T J =125°C
60
63
10
100
100
-100
V
o
μA
μA
nA
nA
ON CHARACTERISTICS
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250 μA
2
3
4
V
T J =125°C
1.5
2.4
3
R DS(ON)
Static Drain-Source On-Resistance
V GS = 10 V, I D = 4 A
0.084
0.1
?
T J =125°C
0.14
0.18
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 10 V
V DS = 15 V, I D = 4 A
15
6
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 30 V, V GS = 0 V,
f = 1.0 MHz
250
100
30
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 25 V, I D = 1.2 A,
V GS = 10 V, R GEN = 50 ?
V DS = 40 V, I D = 4 A,
V GS = 10 V
10
18
37
30
9
2.3
2.6
25
50
65
60
15
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Drain-Source Diode Forward Current
2.5
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 2.5 A
(Note 2)
0.85
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
guaranteed by design while R θ CA is determined by the user's board design.
Typical R θ JA using the board layouts shown below on FR-4 PCB in a still air environment:
the drain pins. R θ JC is
a. 42 o C/W when mounted on a 1 in 2 pad of
2oz Cu.
b. 95 o C/W when mounted on a
pad of 2oz Cu.
0.066 in 2
c. 110 o C/W when mounted on a 0.00123
in 2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
NDT3055 Rev.B
相关PDF资料 |
PDF描述 |
|---|---|
| NDT451AN_J23Z | MOSFET N-CH 30V 7.2A SOT-223 |
| NDT452AP | MOSFET P-CH 30V 5A SOT-223-4 |
| NDT454P | MOSFET P-CH 30V 5.9A SOT-223 |
| NDT456P | MOSFET P-CH 30V 7.5A SOT-223-4 |
| NE34018-EVGA19 | EVAL BOARD NE34018 1.9GHZ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDT3055(J23Z) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4A I(D) | SOT-223 |
| NDT3055_J23Z | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDT3055-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDT Series N-Channel 60 V 0.1 O Enhancement Mode Field Effect Transistor SOT-223 |
| NDT3055L | 功能描述:MOSFET SOT-223 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDT3055L(J23Z) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3.7A I(D) | SOT-223 |
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