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参数资料
| 型号： | NDT451AN_J23Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7.2A SOT-223 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 7.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 720pF @ 15V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 带卷 (TR) |
February 2009
NDT451AN
N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as DC motor control and DC/DC
conversion where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
7.2A, 30V. R DS(ON) = 0.035 ? @ V GS = 10V
R DS(ON) = 0.05 ? @ V GS = 4.5V.
High density cell design for extremely low R DS(ON) .
High power and current handling capability in a widely used
surface mount package.
________________________________________________________________________________
D
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
G
D
S
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
NDT451AN
30
± 20
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
± 7.2
A
- Pulsed
± 25
P D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
(Note 1c)
1.3
1.1
T J ,T STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
@ 2009 Fairchild Semiconductor Corporation
NDT451AN Rev. D1
相关PDF资料 |
PDF描述 |
|---|---|
| NDT452AP | MOSFET P-CH 30V 5A SOT-223-4 |
| NDT454P | MOSFET P-CH 30V 5.9A SOT-223 |
| NDT456P | MOSFET P-CH 30V 7.5A SOT-223-4 |
| NE34018-EVGA19 | EVAL BOARD NE34018 1.9GHZ |
| NE5520279A-EVPW09 | EVAL BOARD NE5520279A 900MHZ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDT451N | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDT451N_J23Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDT452 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDT452AP | 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDT452AP(J23Z) | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223 |
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