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| 型号： | NDT456P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 7.5A SOT-223-4 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 67nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1440pF @ 15V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | NDT456PDKR |
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Drain-Source Diode Forward Current
-2.5
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = - 2.5 A
(Note 2)
- 0.85
-1.2
V
t rr
Reverse Recovery Time
V GS = 0 V, I F = - 2.5 A dI F /dt = 100 A/μs
140
ns
Notes:
1. P D ( t )
=
T J ? T A
R θ JA ( t )
=
T J ? T A
R θ JC + R θ CA ( t )
= I 2 D ( t ) × R DS ( ON ) @ T J
R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
solder mounting surface of the drain pins. R θ JC is guaranteed by design while R θ CA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment,
typical R θ JA is found to be:
a. 42 o C when mounted on a 1 in 2 pad of 2oz copper.
b. 95 o C when mounted on a 0.066in 2 pad of 2oz copper.
c. 110 o C/W when mounted on a 0.00123in 2 pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDT456P Rev. F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NDT456P(J23Z) | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SOT-223 |
| NDT456P_Q | 功能描述:MOSFET SOT-223 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDT456P-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDT Series P-Channel 30V 0.03 O Enhancement Mode Field Effect Transistor SOT-223 |
| NDT4812 | 制造商:CANDD 制造商全称:C&D Technologies 功能描述:Isolated 3W Wide Input Dual Output DC-DC Converters |
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