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| 型号： | NDT456P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 6/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 7.5A SOT-223-4 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 67nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1440pF @ 15V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | NDT456PDKR |
Typical Thermal Characteristics
18
15
V DS = -5V
T J = -55°C
3 .5
3
1a
12
9
6
25°C
125°C
2 .5
2
1 .5
1b
3
1
1c
4.5"x5" FR-4 Board
o
T A = 25 C
Still Air
2 o z COPPER M O U N T ING PAD AREA (in )
0
0
-2
-4 -6
I D , DRAIN CURRENT (A)
-8
-10
0 .5
0
0 .2 0 .4 0 .6 0 .8
2
1
Figure 13. Transconductance Variation with Drain
Current and Temperature.
10
Figure 14. SOT-223 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad
Area.
40
100
1m
8
1a
20
10
R
DS
(O
N)
LIM
IT
s
us
1 0 m
1s
6
4
2
1c
1b
4.5"x5" FR-4 Board
o
T A = 25 C
Still Air
3
1
0.3
0.1
0.03
V GS = -10V
SINGLE PULSE
R θ JA = See Note 1c
T A = 25°C
1 0 0 m
10s
DC
s
s
V GS = -10V
0
0
0.2
0.4
0.6
0.8
1
0.01
0.1
0.2
0.5
1
2
5
10
30
50
2oz COPPER MOUNTING PAD AREA (in 2 )
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
1
- V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 16. Maximum Safe Operating Area.
0 .5
D = 0.5
(t) = r(t) * R JA
θ JA
θ
R JA = See Note 1 c
0 .2
0 .1
0 .05
0 .02
0 .2
0 .1
0 .0 5
0 .0 2
P(p k)
R
θ
0 .01
0 .0 1
t 1
t 2
T J - T A = P * R JA (t)
0 .0 0 5
0 .0 0 2
0 .0 0 1
Single Pulse
θ
Duty Cycle, D = t 1 / t 2
0 .0 0 0 1
0 .0 0 1
0 .01
0 .1
1
10
100
300
t 1 , TIM E (sec)
Figure 17. Transient Thermal Response Curve .
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal
response will change depending on the circuit board design.
NDT456P Rev. F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NDT456P(J23Z) | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SOT-223 |
| NDT456P_Q | 功能描述:MOSFET SOT-223 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDT456P-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDT Series P-Channel 30V 0.03 O Enhancement Mode Field Effect Transistor SOT-223 |
| NDT4812 | 制造商:CANDD 制造商全称:C&D Technologies 功能描述:Isolated 3W Wide Input Dual Output DC-DC Converters |
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