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参数资料
| 型号： | NE3510M04-T2-A |
| 厂商： | CEL |
| 文件页数： | 3/11页 |
| 文件大小： | 181K |
| 描述： | FET RF HFET 4GHZ 2V 15MA M04 |
| 标准包装： | 3,000 |
| 晶体管类型： | HFET |
| 频率： | 4GHz |
| 增益： | 16dB |
| 电压 - 测试： | 2V |
| 额定电流： | 97mA |
| 噪音数据： | 0.45dB |
| 电流 - 测试： | 15mA |
| 电压 - 额定： | 4V |
| 封装/外壳： | 4-UMM 扁平引线 |
| 供应商设备封装： | F4TSMM，M04 |
| 包装： | 带卷 (TR) |
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(408)
988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM
Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on
information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
相关PDF资料 |
PDF描述 |
|---|---|
| NE3511S02-T1C-A | HJ-FET NCH 13.5DB S02 |
| NE3512S02-T1C-A | HJ-FET NCH 13.5DB S02 |
| NE3514S02-A | HJ-FET NCH 10DB S02 |
| NE3515S02-T1C-A | FET RF HFET 12GHZ 2V 10MA S02 |
| NE3517S03-A | FET RF HJFET 20GHZ 4V 15MA S03 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3511S02 | 制造商:CEL 制造商全称:CEL 功能描述:X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3511S02-A | 功能描述:射频GaAs晶体管 X to Ku Band Super Low Noise Amp N-Ch RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3511S02-T1C | 制造商:CEL 制造商全称:CEL 功能描述:X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3511S02-T1C-A | 功能描述:射频GaAs晶体管 SUPER Lo Noise PseudomorpHIc HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3511S02-T1D | 制造商:CEL 制造商全称:CEL 功能描述:X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
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