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参数资料
| 型号： | NE5511279A-A |
| 厂商： | CEL |
| 文件页数： | 6/6页 |
| 文件大小： | 372K |
| 描述： | MOSFET LD N-CHAN 7.5V 79A |
| 产品目录绘图： | NEx5 Series |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 900MHz |
| 增益： | 15dB |
| 电压 - 测试： | 7.5V |
| 额定电流： | 3A |
| 电流 - 测试： | 400mA |
| 功率 - 输出： | 40dBm |
| 电压 - 额定： | 20V |
| 封装/外壳： | 79A |
| 供应商设备封装： | 79A |
| 包装： | 散装 |
| 产品目录页面： | 577 (CN2011-ZH PDF) |
6
Data Sheet PU10322EJ01V0DS
NE5511279A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
: 260?C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220?C or higher
: 60 seconds or less
Preheating time at 120 to 180?C
: 120?30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
: 215?C or below
Time at temperature of 200?C or higher
: 25 to 40 seconds
Preheating time
at 120 to 150?C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
: 260?C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature)
: 120?C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
: 350?C or below
Soldering time (per pin of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350-P3
Caution
Do not use different soldering methods together (except for partial heating).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE5511279A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R |
| NE5511279A-T1A | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R 制造商:California Eastern Laboratories 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R |
| NE5511279A-T1-A | 功能描述:射频MOSFET电源晶体管 UHF Band RF Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE5511279A-T1A-A | 制造商:CEL 制造商全称:CEL 功能描述:7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| NE5512 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual high-performance operational amplifier |
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