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参数资料
| 型号： | NE651R479A-EVPW19 |
| 厂商： | CEL |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD NE651R479A 1.9GHZ |
| 标准包装： | 1 |
| 类型： | FET |
| 频率： | 1.9GHz |
| 适用于相关产品： | NE651R479A@1.9GHz |
| 已供物品： | 板 |
NEC's 1 W, L&S-BAND
MEDIUM POWER GaAs HJ-FET
NE651R479A
FEATURES
OUTLINE DIMENSIONS (Units in mm)
? LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
? USABLE TO 3.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
? HIGH OUTPUT POWER:
30 dBm TYP with 5.0 V Vdc
27 dBm TYP with 3.5 V Vdc
? HIGH LINEAR GAIN:
12 dB TYP at 1.9 GHz
? LOW THERMAL RESISTANCE:
30°C/W
Gate
PACKAGE OUTLINE 79A
4.2 Max
Source
Drain Gate
0.4 ± 0.15
5.7 Max
1 .5 ± 0. 2
Source
Drain
0.8 Max
3.6 ± 0.2
DESCRIPTION
NEC's NE651R479A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 0.5 Watts of output
power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5
V with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
TYPICAL 5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (T C
SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX
(Bottom View)
= 25°C)
TEST CONDITIONS
P OUT
G L
η ADD
I D
Output Power
Linear Gain 1
Power Added Efficiency
Drain Current
dBm
dB
%
mA
29.5
12.0
58
350
f = 1.9 GHz, V DS = 5 V
P IN = +15 dBm, R G = 1 k Ω ,
I DSQ = 50 mA (RF OFF)
Note:
1. P IN = 0 dBm.
ELECTRICAL CHARACTERISTICS (T C
PART NUMBER
PACKAGE OUTLINE
= 25°C)
NE651R479A
79A
SYMBOLS
P OUT
G L
η ADD
CHARACTERISTICS
Output Power
Linear Gain 1
Power Added Efficiency
UNITS
dBm
dB
%
MIN
26.0
52
TYP
27.0
12.0
60
MAX
TEST CONDITIONS
f = 1.9 GHz, V DS =3.5 V
P IN = +15 dBm, R G = 1 k Ω ,
I DSQ = 50 mA (RF OFF) 2
I D
Drain Current
mA
220
I DSS
Saturated Drain Current
A
0.7
V DS = 2.5 V, V GS = 0 V
V P
Pinch-Off Voltage
V
-2.0
-0.4
V DS = 2.5 V, I D = 14 mA
BV GD
R TH
Gate to Drain Break Down Voltage
Thermal Resistance, Channel to Case
V
°C/W
12
30
50
I GD = 14 mA
Notes:
1. P IN = 0 dBm.
2. DC performance is 100% tested. Wafers are sample tested for RF performance.
Wafer rejection criteria for standard devices is 1 reject for sample lot.
California Eastern Laboratories
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE651R479A-EVPW24 | 功能描述:射频GaAs晶体管 For NE651R479A-A Power at 2.4 GHz RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE651R479A-EVPW26 | 功能描述:射频GaAs晶体管 For NE651R479A-A Power at 2.6 GHz RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE651R479A-EVPW35 | 功能描述:射频GaAs晶体管 For NE651R479A-A Power at 3.5 GHz RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE651R479A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 8V 1A 4-Pin Case 79A T/R |
| NE651R479A-T1-A | 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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