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参数资料
| 型号： | NE651R479A-EVPW19 |
| 厂商： | CEL |
| 文件页数： | 7/11页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD NE651R479A 1.9GHZ |
| 标准包装： | 1 |
| 类型： | FET |
| 频率： | 1.9GHz |
| 适用于相关产品： | NE651R479A@1.9GHz |
| 已供物品： | 板 |
NE651R79A
TYPICAL APPLICATION CIRCUIT PERFORMANCE at V DS = 3.5 V and V DS = 5 V
GAIN AND SATURATED POWER vs.
FREQUENCY
GAIN AND SATURATED POWER vs.
FREQUENCY
18
17
16
15
14
13
12
11
30
29
28
27
18
17
16
15
14
13
12
11
33
32
31
30
10
9
8
Gain (db) 3.5 V at 50 mA
Gain (db) 3.5 V at 250 mA
P OUT (db) 3.5 V at 50 mA
P OUT (db) 3.5 V at 250 mA
26
25
10
9
8
Gain (db) 5 V at 50 mA
Gain (db) 5 V at 250 mA
P OUT (db) 5 V at 50 mA
P OUT (db) 5 V at 250 mA
29
28
1.9
1.92
1.94
1.96
1.98
2.00
2.02
1.9
1.92
1.94
1.96
1.98
2.00
2.02
Frequency, f (GHz)
POWER ADDED EFFICIENCY& GAIN vs.
OUTPUT POWER
Frequency, f (GHz)
POWER ADDED EFFICIENCY& GAIN vs.
OUTPUT POWER
20
18
16
14
70
60
50
20
18
16
14
70
60
50
12
10
8
6
4
2
Gain, I DSQ = 50 mA
PAE, I DSQ = 50 mA
Gain, I DSQ = 100 mA
PAE, I DSQ = 100 mA
Gain, I DSQ = 250 mA
PAE, I DSQ = 250 mA
F C = 1.96 GHz,
V DS = 3.5 V
40
30
20
10
12
10
8
6
4
2
Gain, I DSQ = 50 mA
PAE, I DSQ = 50 mA
Gain, I DSQ = 100 mA
PAE, I DSQ = 100 mA
Gain, I DSQ = 250 mA
PAE, I DSQ = 250 mA
F C = 1.96 GHz,
VDS = 5 V
40
30
20
10
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34
Output Power, P OUT (dBm)
0
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34
Output Power, P OUT (dBm)
0
THIRD ORDER INTERMODULATION vs.
TOTAL OUTPUT POWER
THIRD ORDER INTERMODULATION vs.
TOTAL OUTPUT POWER
20
10
0
-10
-20
-30
-40
-50
-60
F C = 1.96 GHz, P OUT = Each Tone
VDS = 3.5 V
I DSQ = 50 mA
I DSQ = 100 mA
I DSQ = 250 mA
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34
Total Output Power, P OUT (dBm)
20
10
0
-10
-20
-30
-40
-50
-60
F C = 1.96 GHz, P OUT = Each Tone
VDS = 5 V
I DSQ = 50 mA
I DSQ = 100 mA
I DSQ = 250 mA
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34
Total Output Power, P OUT (dBm)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE651R479A-EVPW24 | 功能描述:射频GaAs晶体管 For NE651R479A-A Power at 2.4 GHz RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE651R479A-EVPW26 | 功能描述:射频GaAs晶体管 For NE651R479A-A Power at 2.6 GHz RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE651R479A-EVPW35 | 功能描述:射频GaAs晶体管 For NE651R479A-A Power at 3.5 GHz RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE651R479A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 8V 1A 4-Pin Case 79A T/R |
| NE651R479A-T1-A | 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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