参数资料
型号: NILMS4501NR2G
厂商: ON Semiconductor
文件页数: 3/9页
文件大小: 0K
描述: IC MOSF N-CH 9.5A 24V ESD 4-PLLP
产品变化通告: Product Obsolescence 14/Apr/2010
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 电流感测
漏极至源极电压(Vdss): 24V
电流 - 连续漏极(Id) @ 25° C: 9.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 13 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 25nC @ 10V
输入电容 (Ciss) @ Vds: 1500pF @ 6V
功率 - 最大: 1.4W
安装类型: 表面贴装
封装/外壳: 4-DFN
供应商设备封装: 4-PLLP
包装: 剪切带 (CT)
其它名称: NILMS4501NR2GOSCT
NILMS4501N
MAIN MOSFET ELECTRICAL CHARACTERISTICS (continued) (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C iss
?
1380
1500
pF
Output Capacitance
Transfer Capacitance
(V DS = 6.0 V, V GS = 0 V, f = 1.0 MHz)
C oss
C rss
?
?
870
275
1000
350
SWITCHING CHARACTERISTICS (Note 6)
Turn?On Delay Time
t d(on)
?
12
14
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 6.0 V, I D = 2.0 A,
V GS = 4.5 V, R G = 2.5 W )
t r
t d(off)
t f
?
?
?
15
17
6.0
18
20
8.0
Turn?On Delay Time
t d(on)
?
8.5
11
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 6.0 V, I D = 2.0 A,
V GS = 10 V, R G = 2.5 W )
t r
t d(off)
t f
?
?
?
15
22.5
6.5
20
27
9.0
Gate Charge
Gate Charge
(V DS = 6.0 V, I D = 2.0 A, V GS = 4.5 V)
(V DS = 6.0 V, I D = 2.0 A, V GS = 10 V)
Q T
Q G(th)
Q gs
Q gd
Q T
Q G(th)
Q gs
Q gd
?
?
?
?
?
?
?
?
11
1.7
3.5
3.6
23.5
4.4
5.6
2.5
14
2.5
4.5
4.3
25
5.5
10
7.0
nC
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
(Notes 5 & 6)
Reverse Recovery Time
(I S = 6.0 A, V GS = 0 V)
(I S = 6.0 A, V GS = 0 V, T J = 175 ° C)
V SD
t rr
?
?
?
0.80
0.57
42
1.1
?
55
V
ns
(Note 6)
(I S = 3.0 A, V GS = 0 V, dI S /dt = 100 A/ m s)
t a
t b
?
?
19.5
22.5
25
30
Reverse Recovery Stored
Q RR
?
0.042
0.06
m C
Charge (Note 6)
5. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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