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参数资料
| 型号： | NILMS4501NR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSF N-CH 9.5A 24V ESD 4-PLLP |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 电流感测 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1500pF @ 6V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-DFN |
| 供应商设备封装： | 4-PLLP |
| 包装： | 剪切带 (CT) |
| 其它名称： | NILMS4501NR2GOSCT |
NILMS4501N
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
V GS = 10 V
1E6
V GS = 0 V
2.0
I D = 3 A
1E5
T J = 175 ° C
1000
1.5
1.0
0.5
100
10
1.0
0.1
T J = 125 ° C
T J = 25 ° C
0
?50
0
50
100
150
200
0.01
0
5
10
15
20
25
T J , JUNCTION TEMPERATURE ( ° C)
Figure 7. On?Resistance Variation with
Temperature
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 8. Drain?To?Source Leakage
Current versus Voltage
2000
1800
1600
I D = 1 A
V GS = 4.5 V
T J = ?55 ° C
T J = 25 ° C
500
450
T J = ?55 ° C
I D = 1 A
V SENSE = 0 V
V SOURCE = 0 V
1400
1200
1000
800
600
400
T J = 125 ° C
T J = 175 ° C
400
350
300 T J = 175 ° C
250
T J = 25 ° C
T J = 125 ° C
200
0
0
2
4
6
8
10
12
14
16
200
2.0
2.5
3.0
3.5
4.0
4.5
5.0
R SENSE , EXTERNAL RESISTOR VALUE ON SENSE PIN ( W )
Figure 9. Current Ratio versus R SENSE
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 10. Current Ratio versus V GS
I D = 1 A
2500
2000
T J = ?55 ° C
I D = 1 A
V SENSE = 0 V
V GS = 4.5 V
2000
1800
V SOURCE = 0 V
1600 V GS = 4.5 V
?55 ° C
25 ° C
125 ° C
175 ° C
1400
1500
1000
500
25 ° C
125 ° C
1200
1000
800
600
400
T J = 175 ° C
0
?0.01 ?0.005 0
0.005
0.01 0.015
0.02 0.025 0.03
200
0
?0.01
?0.005
0
0.005
0.01
0.015
0.02
V SOURCE , VOLTAGE DROP FROM SOURCE PIN TO GROUND (V)
Figure 11. I RATIO versus V SOURCE
V SENSE , VOLTAGE DROP FROM SENSE PIN TO GROUND (V)
Figure 12. Current Ratio versus V SENSE
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