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| 型号： | NMSD200B01-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 200MA SOT363 |
| 其它图纸： | SOT-363 Package Top SOT-363 Package Side 1 SOT-363 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 50mA，5V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | NMSD200B01DIDKR NMSD200B01DKR NMSD200B01DKR-ND |
NMSD200B01
200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE
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General Description
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NMSD200B01 is best suited for switching voltage
regulator and power management applications. It
improves efficiency and reliability of DC-DC controllers
used in Voltage Regulator Modules (VRM) and can
support continuous maximum current of 200mA. It
features an ESD protected discrete N-MOSFET with low
on-resistance and a discrete Schottky diode with low
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5
4
forward drop. It reduces component count, consumes
less space and minimizes parasitic losses. The
component devices can be used as a part of a circuit or
as a stand alone discrete device.
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3
Features
Fig 1. SOT-363
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N-MOSFET with ESD Gate Protection
N-MOSFET with Low On-Resistance (R DS(ON) )
Low V f Schottky Diode
Low Static, Switching and Conduction Losses
Good Dynamic Performance
Surface Mount Package Suited for Automated Assembly
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
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Case: SOT-363
Case Material: Molded Plastic. "Green Molding"
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 7
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Ordering Information: See Last Page
Weight: 0.006 grams (approximate)
Fig 2. Schematic and Pin Configuration
Sub-Components
DMN601K_DIE (ESD Protected)
SD103AWS_DIE
Reference
Q1
D1
Device Type
N-MOSFET
Schottky Diode
Figure
2
2
Maximum Ratings, Total Device
@T A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 25 ° C
Output Current
Symbol
P d
P der
I out
Value
200
1.6
200
Unit
mW
mW/°C
mA
Thermal Characteristics
Characteristic
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of N-MOSFET)
Notes:
1.
No purposefully added lead.
Symbol
T j , T stg
R θ JA
Value
-55 to +150
625
Unit
° C
° C/W
2.
3.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30911 Rev. 7 - 2
1 of 8
www.diodes.com
NMSD200B01
? Diodes Incorporated
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