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参数资料
| 型号： | NMSD200B01-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 200MA SOT363 |
| 其它图纸： | SOT-363 Package Top SOT-363 Package Side 1 SOT-363 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 50mA，5V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | NMSD200B01DIDKR NMSD200B01DKR NMSD200B01DKR-ND |
Mechanical Details
A
SOT-363
Dim
A
Min
0.10
Max
0.30
B C
B
C
1.15
2.00
1.35
2.20
D
0.65 Nominal
F
H
0.30
1.80
0.40
2.20
H
J
K
L
?
0.90
0.25
0.10
1.00
0.40
K
M
M
α
0.10
0 °
0.25
8°
All Dimensions in mm
J
D
F
L
Fig. 21
Suggested Pad Layout: (Based on IPC-SM-782)
E
E
Figure 22
Dimensions
Z
G
X
SOT-363*
2.5
1.3
0.42
Z
G
C
Y
C
0.6
1.9
E
0.65
*Typical dimensions in mm
Y
X
Fig. 22
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30911 Rev. 7 - 2
8 of 8
www.diodes.com
NMSD200B01
? Diodes Incorporated
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