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| 型号： | NMSD200B01-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 200MA SOT363 |
| 其它图纸： | SOT-363 Package Top SOT-363 Package Side 1 SOT-363 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 50mA，5V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | NMSD200B01DIDKR NMSD200B01DKR NMSD200B01DKR-ND |
Maximum Ratings: @T A = 25°C unless otherwise specified
Sub-Component Device: ESD Protected N-Channel MOSFET (Q1)
Characteristic
Drain Source Voltage
Drain Gate Voltage (RGS <+ 1MOhm)
Symbol
V DSS
V DGR
Value
60
60
Unit
V
V
Gate Source Voltage
Drain Current (Page 1: Note 3)
Continuous Source Current
Continuous
Pulsed (tp<50 uS)
Continuous (V gs =10V)
Pulsed (tp<10uS, Duty Cycle<1%)
V GSS
I D
I S
+/-20
+/-40
200
800
200
V
mA
mA
Sub-Component Device: Schottky Diode (D1)
@T A = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Page 1: Note 3)
Non-Repetitive Peak Forward Surge Current @ t<1.0 s
Symbol
V RRM
V RWM
VR
V R(RMS)
I FM
I FSM
Value
40
28
350
1.5
Unit
V
V
mA
A
Electrical Characteristics:
ESD Protected N-Channel MOSFET (Q1)
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BV DSS
Zero Gate Voltage Drain Current (Drain Leakage Current)
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
V BR(DSS)
I DSS
I GSSF
I GSSR
60
?
?
?
?
?
?
?
?
1
10
-10
V
μ A
μ A
μ A
V GS = 0V, I D = 10 μ A
V GS = 0V, V DS = 60V
V GS = 20V, V DS = 0V
V GS = -20 V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply Voltage)
Static Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On Resistance
Forward Transconductance
V GS(th)
V DS(on)
I D(on)
R DS (on)
g FS
1
1.1
?
?
500
?
?
80
1.6
1.8
0.09
0.62
?
1.6
1.25
260
2.5
3
1.5
1.25
?
3
2
?
V
V
V
V
mA
Ω
mS
V DS = V GS =10V, I D = 0.25mA
V DS = V GS = 10V, I D = 1mA
V GS = 5V, I D = 50mA
V GS = 10V, I D = 500mA
V GS = 10V, V DS >=2*V DS(ON)
V GS = 5V, I D = 50mA
V GS = 10V, I D = 500mA
V DS >=2*V DS(ON), I D =200mA
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
50
25
5
pF
pF
pF
V DS = 25V, V GS = 0V,
f = 1MHz
Switching Characteristics
Turn-On Delay Time
Turn-Off Delay Time
t d(on)
t d(off)
?
?
?
20
40
ns
ns
?
?
Drain-Source (Body) Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward Current
(Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward Current
V SD
I S
I SM
?
?
?
0.88
?
?
1.5
300
800
V
mA
mA
V GS = 0V, I S = 300 mA*
?
?
Electrical Characteristics: Schottky Barrier Diode (D1)
@T A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 4)
Forward Voltage Drop (Note 4)
Peak Reverse Current (Note 4)
Total Capacitance
Reverse Recovery Time
Symbol
V (BR)R
V FM
I RM
C T
t rr
Min
40
?
?
?
?
?
Typ
?
?
?
?
28
10
Max
?
0.37
0.6
5
?
?
Unit
V
V
μ A
pF
ns
Test Condition
I R = 10 μ A
I F =20mA
I F =200mA
V R = 30V
V R = 0V, f = 1.0 MHz
I F =I R = 200 mA, I rr = 0.1xI R , R L = 100 Ω
Notes:
4. Short duration pulse test used to minimize self-heating effect.
DS30911 Rev. 7 - 2
2 of 8
www.diodes.com
NMSD200B01
? Diodes Incorporated
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