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| 型号： | NMSD200B01-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 200MA SOT363 |
| 其它图纸： | SOT-363 Package Top SOT-363 Package Side 1 SOT-363 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 50mA，5V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | NMSD200B01DIDKR NMSD200B01DKR NMSD200B01DKR-ND |
Application Details
ESD Protected N-MOSFET (DMN601K) and Schottky Barrier
Diode (SD103AWS) integrated as one in NMSD200B01 can be
used as a discrete entity for general applications or part of
circuits to function as a low side switch in a Synchronous
Rectifier. The N-MOSFET is selected based on the input
voltage range as the maximum duty cycles can be greater than
45%. Schottky diode is selected based on instantaneous V f
(less than 0.75 V) at maximum operation current. The Schottky
diode dissipates very little power because it is on for only a
small portion of the switching cycle. Normally it shows much
lower leakage current and smaller on-resistance (R DS(ON) ) even
compared to its monolithic counterpart. This device is designed
to improve efficiency and reliability of synchronous buck
converters used in voltage regulator modules (VRM). The
lower V f of the Schottky diode leads to lower static loss. Every
time the high side MOSFET is turned on in the buck converter,
the low side Schottky diode is forced to recover the stored
charge and there will be lower loss due to the lower Reverse
Recovery charge of the Schottky diode.
It is designed to replace a discrete N-MOSFET and a Schottky
diode in two separate packages into one small package as
shown in Fig. 17. The Schottky diode parallel to the MOSFET
body diode is faster and has lower voltage drop compared to
Gate
Drain
Q1
DMN601K
Source
Cathode
D1
S D 1 0 3 AW S
Anode
the integrated body diode. Overall this device consumes less
board space and also helps to minimize conduction or switching
losses due to parasitic inductances (e.g. PCB traces) in power
supply applications. (Please see Fig. 18 for one example of
typical application circuit used in conjunction with DC-DC
converter as a part of power management system and Fig. 19
for low side DC load control.)
Typical Application Circuits
HighSide
Fig. 17 Example Circuit Diagram
DC-DC Controller
Q2
DMN601K
Body Diode
VCC
0
and Driver ICS
LowSide
Main Inductor
Q1
D1
C1
Load
SD103AWS
DMN601K
NMSD200B01
0
Fig. 18 Synchronous Buck Converter with Integrated Schottky Diode
DS30911 Rev. 7 - 2
6 of 8
www.diodes.com
NMSD200B01
? Diodes Incorporated
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