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| 型号： | NIS5112D1R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 410K |
| 描述： | IC ELECTRONIC FUSE HOTSWAP 8SOIC |
| 标准包装： | 1 |
| 功能： | 电子保险丝 |
| 输入电压： | 9 V ~ 18 V |
| 电流 - 输出： | 2A |
| 工作温度： | -40°C ~ 175°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NIS5112D1R2GOSCT |
NIS5112
http://onsemi.com
3
Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: V
CC
= 12 V, R
LIMIT
= 56 W T
J
= 25癈)
Characteristics
Symbol
Min
Typ
Max
Unit
POWER FET
Delay Time (Enabling of Chip to Beginning of Conduction (10% of IPK))
T
dly
5.0
ms
Charging Time (Beginning of Conduction to 90% of V
out
)
C
dV/dt
= 1 mF, C
load
= 1000 mF
t
chg
64
ms
ON Resistance
(I
D
= 2 A, T
J
= 20癈) (Note 3)
(I
D
= 2 A, T
J
= 25癈)
(I
D
= 2 A, T
J
= 100癈) (Note 3)
R
DSon
23.5
28
37
27.5
32
43.5
mW
Off State Output Voltage
(V
in
= 12 V
dc
, Enable Low, V
dc
, T
J
= 20癈) (Note 3)
(V
in
= 12 V
dc
, Enable Low, T
J
= 25癈)
(V
in
= 12 V
dc
, Enable Low, T
J
= 100癈) (Note 3)
V
off
120
120
200
mV
Output Capacitance (V
DS
= 12 V
dc
, V
GS
= 0 V
dc
, f = 10 kHz)
396
pF
THERMAL LATCH
Shutdown Temperature (Note 3)
T
SD
125
135
145
癈
Thermal Hysteresis (Auto Retry Only) (Note 3)
T
hyst
40
癈
ENABLE/TIMER
Enable Voltage (Turnon)
(R
load
= 2 K, T
J
= 20癈) (Note 3)
(R
load
= 2 K, T
J
= 25癈)
(R
load
= 2 K, T
J
= 100癈) (Note 3)
V
ENon
2.45
2.5
2.7
V
Enable Voltage (Turnoff)
(R
load
= 2 K, T
J
= 20癈) (Note 3)
(R
load
= 2 K, T
J
= 25癈)
(R
load
= 2 K, T
J
= 100癈) (Note 3)
V
ENoff
1.8
1.9
2.0
V
Charging Current (Current Sourced into Timing Cap)
(T
J
= 20癈) (Note 3)
(T
J
= 25癈)
(T
J
= 100癈) (Note 3)
I
Charge
67
70
71
80
83
84
90
92
96
mA
OVERVOLTAGE CLAMP
Output Clamping Voltage
(V
CC
= 18 V, T
J
= 20癈) (Note 3)
(V
CC
= 18 V, T
J
= 25癈)
(V
CC
= 18 V, T
J
= 100癈) (Note 3)
V
Clamp
14
14
13
15.5
15
14.5
17
16.2
16
V
CURRENT LIMIT
Short Circuit Current Limit,
(R
extILimit
= 56 W, T
J
= 20癈) (Note 3)
(R
extILimit
= 56 W, T
J
= 25癈)
(R
extILimit
= 56 W, T
J
= 100癈) (Note 3)
I
LimSS
2.05
2.0
1.7
2.7
2.5
2.3
3.2
3.0
2.7
A
Overload Current Limit, (Note 3)
(R
extILimit
= 56 W, T
J
= 20癈)
(R
extILimit
= 56 W, T
J
= 25癈)
(R
extILimit
= 56 W, T
J
= 100癈)
I
LimOL
3.7
3.5
3.4
4.6
4.4
4.3
5.5
5.3
5.2
A
dV/dt CIRCUIT
Slew Rate
(C
dV/dt
= 1 mf)
dV/dt
0.130
0.15
0.170
V/ms
Charging Current (Current Sourced into dV/dt Cap)
(T
J
= 20癈) (Note 3)
(T
J
= 25癈)
(T
J
= 100癈) (Note 3)
I
dV/dt
67
70
71
80
83
84
90
92
96
mA
Max Capacitor Voltage
V
max
V
CC
V
TOTAL DEVICE
Bias Current (Device Operational, Load Open, V
in
= 12 V)
I
Bias
1.45
2.0
mA
Minimum Operating Voltage
V
min
9.0
V
3. Verified by design.
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