参数资料
型号: NIS5112D1R2G
厂商: ON Semiconductor
文件页数: 8/9页
文件大小: 410K
描述: IC ELECTRONIC FUSE HOTSWAP 8SOIC
标准包装: 1
功能: 电子保险丝
输入电压: 9 V ~ 18 V
电流 - 输出: 2A
工作温度: -40°C ~ 175°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 剪切带 (CT)
其它名称: NIS5112D1R2GOSCT
NIS5112
http://onsemi.com
8
There is an inherent delay in the turn on of the electronic
fuse, due to the method of gate drive used. The gate of the
power FET is charged through a high impedance resistor,
and from the time that the gate starts charging until the time
that it reaches its threshold voltage, there will be no
conduction. Once the gate reaches its threshold voltage, the
output current will begin a controlled ramp up phase.
This delay will be added to any timing delay due to the
enable/timer circuit. Figure 10 shows a simplified diagram
of the enable/timer circuit.
Figure 10. Simplified Schematic Diagram of the
Enable/Timer Circuit

+
Enabled
2.5 V
80 mA
Enable/
Timer
Thermal Protection Circuit
The temperature limit circuit senses the temperature of the
Power FET and removes the gate drive if the maximum level
is exceeded. The NIS5112 device has two different thermal
limit versions, autoretry and latch off.
AutoRetry Version
The device will shut down when the thermal limit
threshold is reached (T
J
 = 135癈, typical) and will not turn
back on until the die temperature reduces down to 95癈
(40癈 hysteresis, typical). It will keep autoretrying until
the fault condition is removed or power is turnedoff.
LatchOff Version
For the latchoff version, the device will shut down when
the thermal limit threshold is reached (T
J
 = 135癈, typical)
and will remain off until power is reset.
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