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参数资料
| 型号： | NJ450 |
| 厂商： | InterFET Corporation |
| 英文描述： | Silicon Junction Field-Effect Transistor |
| 中文描述： | 硅结场效应晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 129K |
| 代理商： | NJ450 |
F-36
01/99
NJ450 Process
Silicon Junction Field-Effect Transistor
LOW R(on) Switch
Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ450 Process.
Datasheet
2SK363
IFN146, IFN147
IFN363
J108, J109
J110, J110A
At 25°C free air temperature:
NJ450 Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 25
– 30
V
IG = – 1 A, VDS = V
Reverse Gate Leakage Current
IGSS
– 50
– 1000
pA
VGS = – 15V, VDS = V
Drain Saturation Current (Pulsed)
IDSS
5
600
mA
VDS = 15V, VGS = V
Gate Source Cutoff Voltage
VGS(OFF)
– 0.1
– 10
V
VDS = 15V, ID = 1 nA
Dynamic Electrical Characteristics
Drain Source ON Resistance
rds(on)
7
ID = 1 mA, VGS = V
f = 1 kHz
Forward Transconductance
gfs
250
mS
VDS = 15V, VGS = V
f = 1 kHz
Input Capacitance
Ciss
20
pF
VDS = V, VGS = – 10V
f = 1 MHz
Feedback Capacitance
Crss
10
pF
VDS = V, VGS = – 10V
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
G
S-D
Die Size = 0.028" X 0.028"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Databook.fxp
1/13/99 2:09 PM
Page F-36
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NJ450L | 制造商:INTERFET 制造商全称:INTERFET 功能描述:Silicon Junction Field-Effect Transistor |
| NJ45C11192 | 制造商:WINCHESTER 制造商全称:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
| NJ45C11195 | 制造商:WINCHESTER 制造商全称:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
| NJ45C11792 | 制造商:WINCHESTER 制造商全称:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
| NJ45C12192 | 制造商:WINCHESTER 制造商全称:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
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