参数资料
型号: NJ450
厂商: InterFET Corporation
英文描述: Silicon Junction Field-Effect Transistor
中文描述: 硅结场效应晶体管
文件页数: 2/2页
文件大小: 129K
代理商: NJ450
01/99
F-37
NJ450 Process
Silicon Junction Field-Effect Transistor
Gate Source Cutoff Voltage in Volts
Drain
Source
(on)
Resistance
in
RDS as a Function of VGS(OFF)
30
25
20
15
10
5
Drain Source Cutoff Voltage in Volts
0
– 1– 2– 3– 4– 5– 6
Drain
Saturation
Current
in
mA
Drain Saturation Current as a Function of VGS(OFF)
500
400
300
200
100
Gate Source Cutoff Voltage in Volts
Transconductance
in
mS
Gfs as a Function of VGS(OFF)
Gate Source Voltage in Volts
Feedback
Capacitance
in
pF
Feedback Capacitance as a Function of VGS
0
– 4
– 8
– 12
– 16
0
– 1
– 2
– 3
– 4
– 5
– 6
0
– 1
– 2
– 3
– 4
– 5
– 6
450
300
150
100
80
60
40
20
300
250
200
150
100
Drain to Source Voltage in Volts
0
5
10
15
20
Drain
Current
in
mA
Drain Current as a Function of VDS
VGS = –4 V
VGS = –3 V
VGS = –2 V
VGS = –1 V
VGS = V
VGS(OFF) = 4.5 V
VDS = V
VDS = 5 V
VDS = 10 V
Gate Source Voltage in Volts
Input
Capacitance
in
pF
Input Capacitance as a Function of VGS
0
– 4
– 8
– 12
– 16
100
80
60
40
20
VDS = V
VDS = 5 V
VDS = 10 V
Databook.fxp
1/13/99 2:09 PM
Page F-37
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