- 您现在的位置：买卖IC网 > Datasheet目录484 > NP36N055SLE-E1-AY (Renesas Electronics America)MOSFET N-CH 55V 36A TO-252 Datasheet资料下载
参数资料
| 型号： | NP36N055SLE-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 36A TO-252 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 36A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4400pF @ 25V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252（MP-3ZK） |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36N055HLE, NP36N055ILE, NP36N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
These products are N-Channel MOS Field Effect
Transistor designed for high current switching applications.
PART NUMBER
NP36N055HLE
PACKAGE
TO-251 (JEITA) / MP-3
FEATURES
NP36N055ILE
Note
TO-252 (JEITA) / MP-3Z
? Channel temperature 175 degree rated
? Super low on-state resistance
R DS(on)1 = 13 m ? MAX. (V GS = 10 V, I D = 18 A)
NP36N055SLE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
R DS(on)2 = 16 m ? MAX. (V GS = 5 V, I D = 18 A)
? Low C iss : C iss = 2900 pF TYP.
? Built-in gate protection diode
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
V DSS
V GSS
I D(DC)
55
±20
±36
V
V
A
Drain Current (Pulse)
Note1
I D(pulse)
±144
A
Total Power Dissipation (T A = 25°C)
Total Power Dissipation (T C = 25°C)
P T
P T
1.2
120
W
W
(TO-252)
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Note2
Note2
I AS
E AS
T ch
T stg
36 / 33
12 / 108
175
–55 to + 175
A
mJ
°C
°C
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, R G = 25 ?, V GS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.25
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14156EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2005
相关PDF资料 |
PDF描述 |
|---|---|
| NP36P04KDG-E1-AY | MOSFET P-CH -40V -36A TO-263 |
| NP36P04SDG-E1-AY | MOSFET P-CH -40V -36A TO-252 |
| NP36P06KDG-E1-AY | MOSFET P-CH -60V -36A TO-263 |
| NP40N055MLE-S18-AY | MOSFET N-CH 55V 40A TO-220 |
| NP50P04KDG-E1-AY | MOSFET P-CH -40V -50A TO-263 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP36N10SDE | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP36N10SDE-E1-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP36N10SDE-E2-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP36P04KDG | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP36P04KDG-E1-A2 | 制造商:Renesas Electronics Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。