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参数资料
| 型号： | NP36N055SLE-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 4/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 36A TO-252 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 36A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4400pF @ 25V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252（MP-3ZK） |
| 包装： | 带卷 (TR) |
NP36N055HLE, NP36N055ILE, NP36N055SLE
ELECTRICAL CHARACTERISTICS (T A = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
SYMBOL
I DSS
I GSS
V GS(th)
TEST CONDITIONS
V DS = 55 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
V DS = V GS , I D = 250 μ A
MIN.
1.5
TYP.
2
MAX.
10
±10
2.5
UNIT
μ A
μ A
V
Forward Transfer Admittance
Note
| y fs |
V DS = 10 V, I D = 18 A
11
23
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Note
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
R DS(on)1
R DS(on)2
R DS(on)3
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q G1
Q G2
Q GS
Q GD
V F(S-D)
t rr
Q rr
V GS = 10 V, I D = 18 A
V GS = 5 V, I D = 18 A
V GS = 4.5 V, I D = 18 A
V DS = 25 V
V GS = 0 V
f = 1 MHz
V DD = 28 V, I D = 18 A
V GS = 10 V
R G = 1 ?
V DD = 44 V, V GS = 10 V, I D = 18 A
V DD = 44 V
V GS = 5 V
I D = 18 A
I F = 36 A, V GS = 0 V
I F = 36 A, V GS = 0 V
di/dt = 100 A/ μ s
10
12
13
2900
370
180
22
14
69
12
53
30
9
15
1.0
42
60
13
16
18
4400
560
330
48
36
140
29
80
45
m ?
m ?
m ?
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
PG.
D.U.T.
R G = 25 ?
50 ?
L
V DD
PG.
D.U.T.
R G
R L
V DD
V GS
Wave Form
V GS
0
10%
V GS
90%
V GS = 20 → 0 V
V DS
90%
90%
V DD
I D
I AS
BV DSS
V DS
V GS
0
τ
V DS
Wave Form
V DS
0
t d(on)
10%
t r
10%
t d(off)
t f
Starting T ch
τ = 1 μ s
Duty Cycle ≤ 1%
t on
t off
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
2
PG.
50 ?
V DD
Data Sheet D14156EJ4V0DS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP36N10SDE | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP36N10SDE-E1-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP36N10SDE-E2-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP36P04KDG | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP36P04KDG-E1-A2 | 制造商:Renesas Electronics Corporation 功能描述: |
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