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参数资料
| 型号： | NP80N04PUG-E1B-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 80A TO-263 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 135nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7350pF @ 25V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 标准包装 |
| 其它名称： | NP80N04PUG-E1B-AYDKR |
NP80N04NUG, NP80N04PUG
TAPE INFORMATION (NP80N04PUG)
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
Draw-out side
MARKING INFORMATION
? E1B TYPE
NEC
80N04
UG
Reel side
? E2B TYPE
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Infrared reflow
NP80N04PUG
Wave soldering
NP80N04NUG
Partial heating
NP80N04NUG,
NP80N04PUG
Soldering Conditions
Maximum temperature (Package's surface temperature): 260 ° C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220 ° C: 60 seconds or less
Preheating time at 160 to 180 ° C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Solder temperature): 260 ° C or below
Time: 10 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Maximum temperature (Pin temperature): 350 ° C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Recommended
Condition Symbol
IR60-00-3
THDWS
P350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19799EJ1V0DS
9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP80N04PUG-E2B-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N055 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| NP80N055CHE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-220AB |
| NP80N055CHE-AY | 制造商:Renesas Electronics Corporation 功能描述: |
| NP80N055CHE-E1-AY | 制造商:Renesas Electronics Corporation 功能描述: |
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