参数资料
型号: NP82N06PDG-E1-AY
厂商: Renesas Electronics America
文件页数: 9/10页
文件大小: 0K
描述: MOSFET N-CH 60V 82A TO-263
标准包装: 800
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 82A
开态Rds(最大)@ Id, Vgs @ 25° C: 6.7 毫欧 @ 41A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 106nC @ 10V
输入电容 (Ciss) @ Vds: 5700pF @ 25V
功率 - 最大: 1.8W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263
包装: 带卷 (TR)
NP82N06PDG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
MARKING INFORMATION
NEC
82N06
DG
Pb-free plating marking
Abbreviation of part number
Lot code
Reel side
RECOMMENDED SOLDERING CONDITIONS
The NP82N06PDG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Soldering Conditions
Condition Symbol
Infrared reflow
Partial heating
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Pin temperature): 350°C or below
IR60-00-3
P350
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D18227EJ1V0DS
7
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