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参数资料
| 型号： | NP84N075NUE-S18-AY |
| 厂商： | NEC Corp. |
| 元件分类： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS场效应晶体管的开关N沟道功率场效应晶体管 |
| 文件页数： | 3/10页 |
| 文件大小： | 217K |
| 代理商： | NP84N075NUE-S18-AY |
Data Sheet D14675EJ4V0DS
2
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
75
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
Note1
ID(DC)
±84
A
Drain Current (pulse)
Note2
ID(pulse)
±260
A
Total Power Dissipation (TA = 25
°C)
PT1
1.8
W
Total Power Dissipation (TC = 25
°C)
PT2
200
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
55 to +175
°C
Single Avalanche Current
Note3
IAS
19/52/73
A
Single Avalanche Energy
Note3
EAS
333/250/50
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW
≤ 10
μs, Duty cycle ≤ 1%
3. Starting Tch = 25
°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
0.75
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
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