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参数资料
| 型号： | NP84N075NUE-S18-AY |
| 厂商： | NEC Corp. |
| 元件分类： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS场效应晶体管的开关N沟道功率场效应晶体管 |
| 文件页数： | 7/10页 |
| 文件大小： | 217K |
| 代理商： | NP84N075NUE-S18-AY |
Data Sheet D14675EJ4V0DS
6
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature -
°C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
0
50
5
10
15
0
50
100
150
ID = 42 A
20
25
30
VGS = 10 V
Pulsed
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
IF
-
Diode
Forward
Current
-
A
1.5
VF(S-D) - Source to Drain Voltage - V
0.5
0
Pulsed
VGS = 10 V
0 V
0.1
1
10
100
1000
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
10
0.1
100
1000
10000
110
100
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
Figure15. SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
1000
10
100
tf
tr
td(on)
td(off)
VDD = 38 V
VGS = 10 V
RG = 0
Ω
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
IF - Diode Forward Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/
μs
VGS = 0 V
1
0.1
10
1.0
10
100
1000
100
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
20
40
80
120
100
80
60
40
20
0
VDD = 60 V
38 V
15 V
VDS
0
60
100
10
8
6
4
2
0
VGS
ID = 84 A
相关PDF资料 |
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