- 您现在的位置：买卖IC网 > PDF目录299559 > NP84N075NUE-S18-AY (NEC Corp.) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET PDF资料下载
参数资料
| 型号： | NP84N075NUE-S18-AY |
| 厂商： | NEC Corp. |
| 元件分类： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS场效应晶体管的开关N沟道功率场效应晶体管 |
| 文件页数： | 6/10页 |
| 文件大小： | 217K |
| 代理商： | NP84N075NUE-S18-AY |
Data Sheet D14675EJ4V0DS
5
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
Figure6. FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
10
1
0.1
100
1000
Pulsed
23
45
7
6
TA =
55°C
25
°C
75
°C
150
°C
175
°C
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
8
400
320
240
160
80
0
4
Pulsed
VGS = 10 V
0
6
2
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
VDS = 10 V
Pulsed
0.01
0.1
1
10
100
10
100
0.01
0.1
1
75
°C
25
°C
TA = 175
°C
55°C
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
0
2
4
6
8
10 12 14 16 18 20
10
Pulsed
20
ID = 42 A
0
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
10
1
20
30
100
1000
Pulsed
0
VGS = 10 V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature -
°C
V
GS(th)
-
Gate
to
Source
Threshold
Voltage
-
V
1.0
VDS = VGS
ID = 250
μA
2.0
3.0
4.0
50
0
50
100
150
0
相关PDF资料 |
PDF描述 |
|---|---|
| NP84N075NUE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N04CHE-S12-AZ | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04DHE-S12-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04EHE-E1-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04EHE-E2-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP84W | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 4-G, 4) DUP, WH |
| NP865B | 制造商:Pentair Technical Products / Hoffman 功能描述:Nstar 800x600x500 Blk Pkg Black, 30.20x21.77x19.68, Steel |
| NP866B | 制造商:Pentair Technical Products / Hoffman 功能描述:Nstar 800x600x600 Blk Pkg Black, 30.20x21.77x23.62, Steel |
| NP86N04CHE | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04CHE-S12-AZ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
发布紧急采购，3分钟左右您将得到回复。