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参数资料
| 型号： | NP84N075NUE-S18-AY |
| 厂商： | NEC Corp. |
| 元件分类： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS场效应晶体管的开关N沟道功率场效应晶体管 |
| 文件页数： | 4/10页 |
| 文件大小： | 217K |
| 代理商： | NP84N075NUE-S18-AY |
Data Sheet D14675EJ4V0DS
3
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 75 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±100
nA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
μA
2.0
3.0
4.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 42 A
21
43
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 42 A
9.3
12.5
m
Ω
Input Capacitance
Ciss
VDS = 25 V,
5600
8400
pF
Output Capacitance
Coss
VGS = 0 V,
530
800
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
270
490
pF
Turn-on Delay Time
td(on)
VDD = 38 V, ID = 42 A,
30
66
ns
Rise Time
tr
VGS = 10 V,
21
53
ns
Turn-off Delay Time
td(off)
RG = 0
Ω
72
150
ns
Fall Time
tf
12
30
ns
Total Gate Charge
QG
VDD = 60 V,
100
150
nC
Gate to Source Charge
QGS
VGS = 10 V,
24
nC
Gate to Drain Charge
QGD
ID = 84 A
35
nC
Body Diode Forward Voltage
VF(S-D)
IF = 84 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 84 A, VGS = 0 V,
70
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
200
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
PG.
L
VDD
VGS = 20 V
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
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