参数资料
型号: NP90N04VUG-E1-AY
厂商: Renesas Electronics America
文件页数: 6/10页
文件大小: 0K
描述: MOSFET N-CH TO-252
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 90A
开态Rds(最大)@ Id, Vgs @ 25° C: 4 毫欧 @ 45A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 135nC @ 10V
输入电容 (Ciss) @ Vds: 7500pF @ 25V
功率 - 最大: 1.2W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252
包装: 标准包装
其它名称: NP90N04VUG-E1-AYDKR
NP90N04VUG
350
300
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
100
FORWARD TRANSFER CHARACTERISTICS
250
200
150
100
10
1
0.1
0.01
T ch = ? 55 ° C
? 25 ° C
25 ° C
75 ° C
125 ° C
150 ° C
175 ° C
50
0
V GS = 10 V
Pulsed
0.001
0.0001
V DS = 10 V
Pulsed
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1
2
3
4
5
6
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
5
100
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
150 ° C
4
T ch = ? 55 ° C
? 25 ° C
175 ° C
3
2
10
25 ° C
75 ° C
125 ° C
1
0
V DS = V GS
I D = 250 μ A
1
V DS = 5 V
Pulsed
-75
-25
25
75
125
175
225
0.1
1
10
100
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
8
V GS = 10 V
Pulsed
6
4
2
0
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
8
I D = 45 A
Pulsed
6
4
2
0
1
10
100
1000
0
4
8
12
16
20
4
I D - Drain Current - A
Data Sheet D19545EJ1V0DS
V GS - Gate to Source Voltage - V
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