参数资料
型号: NP90N04VUG-E1-AY
厂商: Renesas Electronics America
文件页数: 7/10页
文件大小: 0K
描述: MOSFET N-CH TO-252
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 90A
开态Rds(最大)@ Id, Vgs @ 25° C: 4 毫欧 @ 45A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 135nC @ 10V
输入电容 (Ciss) @ Vds: 7500pF @ 25V
功率 - 最大: 1.2W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252
包装: 标准包装
其它名称: NP90N04VUG-E1-AYDKR
NP90N04VUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
V GS = 10 V
I D = 45 A
6
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
C iss
4
C oss
1000
2
0
Pulsed
100
V GS = 0 V
f = 1 MHz
C rss
-75
-25
25
75
125
175
225
0.01
0.1
1
10
100
T ch - Channel Temperature - ° C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
50
10
40
V DD = 32 V
20 V
8
100
t d(off)
8V
t d(on)
30
V GS
6
10
t r
t f
20
4
1
V DD = 20 V
V GS = 10 V
R G = 0 Ω
10
0
V DS
I D = 90 A
2
0
0.1
1
10
100
0
20
40
60
80
100
I D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
100
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
10
1
0.1
V GS = 10 V
0V
0.01
0.001
Pulsed
10
V GS = 0 V
di/dt = 100 A/ μ s
0
0.5
1
1.5
0.1
1
10
100
V F(S-D) - Source to Drain Voltage - V
Data Sheet D19545EJ1V0DS
I F - Diode Forward Current - A
5
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