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NT511740D5J
16MEG : x4
CMOS with Extended Data Out
REV 1.0 May. 2000
3
NANYA TECHNOLOGY CORP.
NAYNA TECHNOLOGY CORP. reserves the right to change products and specifications without notice.
DESCRIPTION
This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed
random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V ), refresh
cycle (2K Ref), access time (-5 or -6), power consumption (Normal or Low power) and package type (SOJ) are optional
features of this family.
All of this family have CAS -before- RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore,
Self-refresh operation is available in L-version. This 4Mx4 EDO Mode DRAM family is fabricated using NANYA’s advanced
CMOS process to realize high bandwidth, low power consumption and high reliability.
It may be used as main memory unit for microcomputer, high level computer and personal computer .
FEATURES
Extended Data Out Mode operation (Fast Page Mode with Extended Data Out)
TTL(5V) compatible inputs and outputs
Single +5V ± 10% power supply (5V product)
JEDEC Standard pinout
CAS before RAS refresh, hidden refresh, RAS -only refresh capability
Refresh : 2048 cycles / 32 ms
Self-refresh capability (L-ver only)
Multi-bit test mode capability
Available in plastic SOJ packages
PRODUCT FAMILY
Access Time (Max.)
Family
tRAC
tCAC
tRC
tHPC
Active Power
Dissipation
Voltage
Package
NT511740D5J - 50/5L
50ns
15ns
84ns
20ns
605mW
NT511740D5J - 60/6L
60ns
17ns
104ns
25ns
550mW
5V
26(24)-pin
SOJ