参数资料
型号: NT511740D5J-5L
厂商: NANYA TECHNOLOGY CORP
元件分类: DRAM
英文描述: 4M X 4 EDO DRAM, 50 ns, PDSO24
封装: 0.300 INCH, PLASTIC, SOJ-26/24
文件页数: 12/16页
文件大小: 129K
代理商: NT511740D5J-5L
NT511740D5J
16MEG : x4
CMOS with Extended Data Out
REV 1.0 May. 2000
5
NANYA TECHNOLOGY CORP.
NAYNA TECHNOLOGY CORP. reserves the right to change products and specifications without notice.
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN,VOUT
-1.0 to +7.0
V
Voltage on VCC Supply Relative to VSS
VCC
-1.0 to +7.0
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD*
1
W
Operation Temperature
Topr
0 to 70
°C
Storage Temperature
Tstg
-55 to 150
°C
*:Ta = 25°C
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should
be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
(Voltage referenced to Vss, Ta = 0°C to 70°C )
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Ground
VSS
0
V
Input High Voltage
VIH
2.4
-
Vcc+1.0
*1
V
Input Low Voltage
VIL
-1.0
*2
-
0.8
V
*1 : Vcc +2.0V/20ns(5V), Pulse width is measured at Vcc
*2 : -2.0V/20ns(5V), Pulse width is measured at Vss
Capacitance
( Vcc = 5V, Ta = 25°C, f = 1 MHZ )
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance (A0-A11)
CIN1
-
5
pF
Input Capacitance ( RAS , CAS , WE , OE
)
CIN2
-
7
pF
Output Capacitance (DQ0-DQ3)
CI/O
-
7
pF
DC Characteristics
(Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
<= VIN <= VIN+0.5V,
all other input pins not under test =0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0 <= VOUT <= VCC)
IO(L)
-5
5
uA
Output High Voltage Level (IOH= -5mA)
VOH
2.4
-
V
5V
Output Low Voltage Level (IOL=4.2mA)
VOL
-
0.4
V
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