- 您现在的位置：买卖IC网 > Datasheet目录486 > NTA4001NT1 (ON Semiconductor)MOSFET N-CH 20V 238MA SOT-416 Datasheet资料下载
参数资料
| 型号： | NTA4001NT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 238MA SOT-416 |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 238mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 10mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 100µA |
| 输入电容 (Ciss) @ Vds： | 20pF @ 5V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-75，SOT-416 |
| 供应商设备封装： | SC-75，SOT-416 |
| 包装： | 带卷 (TR) |
| 其它名称： | NTA4001NT1OS |
NTA4001N, NVA4001N
Small Signal MOSFET
20 V, 238 mA, Single, N ? Channel, Gate
ESD Protection, SC ? 75
Features
? Low Gate Charge for Fast Switching
? Small 1.6 x 1.6 mm Footprint
? ESD Protected Gate
? AEC ? Q101 Qualified and PPAP Capable ? NVA4001N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Power Management Load Switch
? Level Shift
? Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
V (BR)DSS
20 V
1
http://onsemi.com
R DS(on)
Typ @ V GS
1.5 W @ 4.5 V
2.2 W @ 2.5 V
3
I D MAX
(Note 1)
238 mA
2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
N ? Channel
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
20
Unit
V
PIN CONNECTIONS
SC ? 75 (3 ? Leads)
Gate ? to ? Source Voltage
Continuous Drain
Current (Note 1)
Steady State = 25 ° C
V GS
I D
± 10
238
V
mA
Gate
1
Power Dissipation
(Note 1)
Steady State = 25 ° C
P D
300
mW
3
Drain
Pulsed Drain Current t P v 10 m s
Operating Junction and Storage Temperature
I DM
T J ,
T STG
714
? 55 to
150
mA
° C
Source
2
(Top View)
Continuous Source Current (Body Diode) I SD 238 mA
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
2
1
SC ? 75 / SOT ? 416
CASE 463
STYLE 5
MARKING DIAGRAM
3
TF M G
G
1 2
TF = Specific Device Code
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 1)
Symbol
R q JA
Max
416
Unit
° C/W
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
1. Surface ? mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.
[1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 2
1
Publication Order Number:
NTA4001N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTA4151PT1 | MOSFET P-CH 20V 760MA SOT-416 |
| NTA4153NT1 | MOSFET N-CH 20V 915MA SOT-416 |
| NTA7002NT1 | MOSFET N-CH 30V 154MA SOT-416 |
| NTB13N10T4G | MOSFET N-CH 100V 13A D2PAK |
| NTB23N03RT4G | MOSFET PWR N-CHAN 25V 23A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTA4001NT1G | 功能描述:MOSFET 20V 238mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTA411 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| NTA4141PT1G | 制造商:ON Semiconductor 功能描述: |
| NTA4151P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 |
| NTA4151PT1 | 功能描述:MOSFET -20V -760mA PChannel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。