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| 型号： | NTA4153NT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 915MA SOT-416 |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 915mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 230 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.82nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 110pF @ 16V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-75，SOT-416 |
| 供应商设备封装： | SC-75，SOT-416 |
| 包装： | 带卷 (TR) |
NTA4153N, NTE4153N
Small Signal MOSFET
20 V, 915 mA, Single N?Channel
with ESD Protection, SC?75 and SC?89
Features
? Low R DS(on) Improving System Efficiency
? Low Threshold Voltage, 1.5 V Rated
? ESD Protected Gate
? Pb?Free Packages are Available
Applications
? Load/Power Switches
? Power Supply Converter Circuits
? Battery Management
? Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
http://onsemi.com
V (BR)DSS R DS(on) TYP
0.127 W @ 4.5 V
0.170 W @ 2.5 V
20 V
0.242 W @ 1.8 V
0.500 W @ 1.5 V
3
N?Channel MOSFET
I D MAX
915 mA
Parameter
Drain?to?Source Voltage
Symbol
V DSS
Value
20
Units
V
Gate?to?Source Voltage
V GS
± 6.0
V
1
2
Continuous Drain
Current (Note 1)
Steady T A = 25 ° C
State
T A = 85 ° C
I D
915
660
mA
MARKING DIAGRAM &
PIN ASSIGNMENT
Power Dissipation
(Note 1)
Steady State
P D
300
mW
3
SC?75 / SOT?416
3
Drain
Pulsed Drain Current t p =10 m s
Operating Junction and Storage Temperature
I DM
T J ,
T STG
1.3
?55 to
150
A
° C
3
1
2
CASE 463
STYLE 5
XX M G
G
CASE 463C
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I S
T L
280
260
mA
° C
SC?89
1
2
1 Gate
XX = Device Code
2
Source
THERMAL RESISTANCE RATINGS
Parameter
Junction?to?Ambient ? Steady State (Note 1)
SC?75 / SOT?416
SC?89
Symbol
R q JA
Value
416
400
Units
° C/W
M = Date Code*
G = Pb?Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
SC?75, SC?89
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
Gate
1
(Cu area = 1.127 in sq [1 oz] including traces).
Source
2
3
Drain
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
March, 2007 ? Rev. 5
1
Publication Order Number:
NTA4153N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTA4153NT1G | 功能描述:MOSFET 20V 915mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTA4153NT1G | 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 20V 915MA SC-75 |
| NTA4153NT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NTA-613 | 制造商:MISCELLANEOUS 功能描述: |
| NTA7002N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 30 V, 154 mA, Single, N−Channel, Gate ESD Protection, SC−75 |
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