- 您现在的位置：买卖IC网 > PDF目录18549 > NTB23N03RG (ON Semiconductor)MOSFET N-CH 25V 23A D2PAK PDF资料下载
参数资料
| 型号： | NTB23N03RG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 23A D2PAK |
| 产品变化通告： | Product Discontinuation 09/Jan/2008 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.76nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 225pF @ 20V |
| 功率 - 最大： | 37.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
NTB23N03R
Power MOSFET
23 Amps, 25 Volts
N-Channel D 2 PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? Pb-Free Packages are Available
Typical Applications
http://onsemi.com
23 AMPERES, 25 VOLTS
R DS(on) = 32 m W (Typ)
?
?
?
?
?
Planar HD3e Process for Fast Switching Performance
Low R DS(on) to Minimize Conduction Loss
Low C iss to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
G
N-CHANNEL
D
High-Efficiency DC-DC Converters
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Symbol
V DSS
V GS
Value
25
± 20
Unit
Vdc
Vdc
MARKING DIAGRAM
& PIN ASSIGNMENTS
Drain Current
- Continuous @ T A = 25 ° C, Limited by Chip
- Continuous @ T A = 25 ° C, Limited by Package
- Single Pulse (t p = 10 m s)
Total Power Dissipation @ T A = 25 ° C
I D
I D
I DM
P D
23
6.0
60
37.5
A
W
1
2
3
4
4 Drain
N TB
23N03G
AYWW
Operating and Storage Temperature Range
Thermal Resistance - Junction-to-Case
T J , T stg
R q JC
-55 to
150
3.3
° C
° C/W
D 2 PAK
CASE 418B
STYLE 2
1
Gate
2
Drain
3
Source
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NTB23N03 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 3
1
Publication Order Number:
NTB23N03R/D
相关PDF资料 |
PDF描述 |
|---|---|
| DR331-513AE | CHOKE COMMON MODE 51UH 25% |
| ABLS-22.1184MHZ-L4Q-T | CRYSTAL 22.11840 MHZ 18PF SMD |
| ASA2-3.6864MHZ-L-T3 | OSC 3.6864 MHZ 1.8V SMD |
| B82731M2182A30 | D CORE DBL CHOKE 3.3MH 1.8A VER |
| B82731M2401A33 | D CORE DBL CHOKE 68MH 0.4A VERT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB23N03RT4 | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB23N03RT4G | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB-2401 | 制造商:Quest Technology International Inc 功能描述: |
| NTB-2402 | 制造商:Quest Technology International Inc 功能描述: |
| NTB-2403 | 制造商:Quest Technology International Inc 功能描述: |
发布紧急采购，3分钟左右您将得到回复。