参数资料
型号: NTB23N03RG
厂商: ON Semiconductor
文件页数: 4/6页
文件大小: 0K
描述: MOSFET N-CH 25V 23A D2PAK
产品变化通告: Product Discontinuation 09/Jan/2008
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds(最大)@ Id, Vgs @ 25° C: 45 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 3.76nC @ 4.5V
输入电容 (Ciss) @ Vds: 225pF @ 20V
功率 - 最大: 37.5W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 管件
NTB23N03R
400
300
C iss
C rss
V DS = 0 V V GS = 0 V
T J = 25 ° C
C iss
8
6
Q T
V GS
200
4
Q 1
Q 2
C oss
100
0
C rss
2
0
I D = 6 A
T J = 25 ° C
10
5
V GS 0 V DS
5
10
15
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
100
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
V DS = 10 V
I D = 6 A
V GS = 10 V
t r
10
8
6
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
V GS = 0 V
10
t d(off)
4
T J = 150 ° C
1
t d(on)
t f
2
0
T J = 25 ° C
1
10
100
0
0.2
0.4
0.6
0.8
1.0
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
http://onsemi.com
4
V SD , SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
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