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| 型号： | NTB5404NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 136A D2PAK |
| 产品变化通告： | Reactivation Notice 08/Apr/2011 Product Obsolescence 24/Jan/2011 |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 136A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 125nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7000pF @ 32V |
| 功率 - 最大： | 167W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
NTB5404N, NTP5404N,
NVB5404N
Power MOSFET
40 V, 167 A, Single N ? Channel, D 2 PAK &
TO ? 220
Features
? Low R DS(on)
? High Current Capability
? Low Gate Charge
? AEC ? Q101 Qualified and PPAP Capable ? NVB5404N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Electronic Brake Systems
? Electronic Power Steering
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
40 V
N ? Channel
G
http://onsemi.com
R DS(ON) MAX
4.5 m W @ 10 V
D
I D MAX
(Note 1)
167 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
40
± 20
Units
V
V
S
MARKING
D IAGRAM S
Continuous Drain
Current ? R q JC
Power Dissipation ?
R q JC
Continuous Drain
Current ? R q JA
(Note 1)
Power Dissipation ?
R q JA (Note 1)
Steady
State
Steady
State
Steady
State
Steady
State
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
I D
P D
I D
P D
167
118
254
24
17
5.4
A
W
A
W
1
2
3
4
D 2 PAK
CASE 418B
STYLE 2
NTB5404NG
AYWW
1
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
I DM
T J ,
T STG
I S
670
? 55 to
175
75
A
° C
A
TO ? 220AB
CASE 221A
STYLE 5
NTP5404NRG
AYWW
Single Pulse Drain ? to Source Avalanche
Energy ? (V DD = 50 V, V GS = 10 V, I PK = 45 A,
L = 1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
1000
260
mJ
° C
1
2
3
G
A
Y
WW
= Pb ? Free Device
= Assembly Location
= Year
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device Package Shipping ?
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Case (Drain)
Symbol
R θ JC
Max
0.59
Unit
° C/W
NTB5404NT4G
NTP5404NRG
D 2 PAK
(Pb ? Free)
TO ? 220
(Pb ? Free)
800 / Tape & Reel
50 Units / Rail
Junction ? to ? Ambient (Note 1) R θ JA
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 7
50
1
° C/W
NVB5404NT4G D 2 PAK 800 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTB5404N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB5405N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 116 A, Single N−Channel, D2PAK |
| NTB5405NG | 功能描述:MOSFET NFET 40V 116A PB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB5405NT4G | 功能描述:MOSFET NFET 40V 116A PB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB5411N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220 |
| NTB5411NT4G | 功能描述:MOSFET NFET D2PAK 60V 75A 12.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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