参数资料
型号: NTB5404NT4G
厂商: ON Semiconductor
文件页数: 7/7页
文件大小: 0K
描述: MOSFET N-CH 40V 136A D2PAK
产品变化通告: Reactivation Notice 08/Apr/2011
Product Obsolescence 24/Jan/2011
标准包装: 800
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 136A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.5 毫欧 @ 40A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 125nC @ 10V
输入电容 (Ciss) @ Vds: 7000pF @ 32V
功率 - 最大: 167W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)
NTB5404N, NTP5404N, NVB5404N
PACKAGE DIMENSIONS
TO ? 220
CASE 221A ? 09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
B
F
T
S
C
? T ?
SEATING
PLANE
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
DIM
INCHES
MIN MAX
MILLIMETERS
MIN MAX
Q
A
A
B
C
0.570 0.620
0.380 0.405
0.160 0.190
14.48 15.75
9.66 10.28
4.07 4.82
H
Z
1 2 3
K
U
D
F
G
H
J
K
0.025 0.036
0.142 0.161
0.095 0.105
0.110 0.161
0.014 0.025
0.500 0.562
0.64 0.91
3.61 4.09
2.42 2.66
2.80 4.10
0.36 0.64
12.70 14.27
L
0.045 0.060
1.15 1.52
L
V
G
R
J
N
Q
R
S
T
U
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
0.000 0.050
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
N
D
V 0.045 ---
Z --- 0.080
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
1.15 ---
--- 2.04
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent ? Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT :
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 Toll Free USA/Canada
Fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 Toll Free USA/Canada
Email : orderlit@onsemi.com
N. American Technical Support : 800 ? 282 ? 9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81 ? 3 ? 5817 ? 1050
http://onsemi.com
7
ON Semiconductor Website : www.onsemi.com
Order Literature : http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTB5404N/D
相关PDF资料
PDF描述
MC08CA020C-F CAP MICA 2PF 100V 0805
CD6ED500JO3 CAP MICA 50PF 500V 5% RADIAL
CD15FD151FO3 CAP MICA 150PF 500V 1% RADIAL
PDA620003 OSC 106.25MHZ 3.3V SMD
CD5EC300GO3F CAP MICA 30PF 300V 2% RADIAL
相关代理商/技术参数
参数描述
NTB5405N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 116 A, Single N−Channel, D2PAK
NTB5405NG 功能描述:MOSFET NFET 40V 116A PB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5405NT4G 功能描述:MOSFET NFET 40V 116A PB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5411N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5411NT4G 功能描述:MOSFET NFET D2PAK 60V 75A 12.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube